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190A325-137

Description
Standard SRAM, 128KX8, 30ns, CMOS, CDFP40, 0.775 X 0.710 INCH, CERAMIC, DFP-40
Categorystorage    storage   
File Size353KB,12 Pages
ManufacturerBAE Systems
Download Datasheet Parametric View All

190A325-137 Overview

Standard SRAM, 128KX8, 30ns, CMOS, CDFP40, 0.775 X 0.710 INCH, CERAMIC, DFP-40

190A325-137 Parametric

Parameter NameAttribute value
Parts packaging codeDFP
package instructionDFP,
Contacts40
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Is SamacsysN
Maximum access time30 ns
JESD-30 codeR-CDFP-F40
length19.685 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals40
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height2.7432 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formFLAT
Terminal pitch0.635 mm
Terminal locationDUAL
width18.034 mm
Base Number Matches1
128K x 8
Radiation Hardened
Static RAM – 5 V
Features
190A325
198A592
Product Description
Other
• Read/Write Cycle Times
≤25
ns, 30 ns, 40 ns (-55 to
125°C)
• SMD Number 5962H96877
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V ±10% Power Supply
• Low Operating Power
• Packaging Options
• 40-Lead Flat Pack (0.775” x 0.710”)
• 40-Lead Flat Pack - Small Cavity (0.775” x 0.650”)
32-Lead Flat Pack (0.652” x 0.820”)
Radiation
• Fabricated with Bulk CMOS 0.5 µm Process
• Total Dose Hardness through 1x10
6
rad(Si)
• Neutron Hardness through 1x10
14
N/cm
2
• Dynamic and Static Transient Upset Hardness
through 1x10
9
rad(Si)/s
• Soft Error Rate of < 1x10
-11
Upsets/Bit-Day
• Dose Rate Survivability through 1x10
12
rad(Si)/s
• Latchup Free
General Description
The 128K x 8 radiation hardened static RAM
is a high performance 131,072 word x 8-bit
static random access memory with industry-
standard functionality. It is fabricated with
BAE SYSTEMS’ radiation hardened
technology and is designed for use in
systems operating in radiation
environments. The RAM operates over the
full military temperature range and requires
a single 5 V ±10% power supply. The RAM
is available with either TTL or CMOS
compatible I/O. Power consumption is
typically less than 20 mW/MHz in operation,
and less than 10 mW in the low power
disabled mode. The RAM read operation is
fully asynchronous, with an associated
typical access time of 19 nanoseconds.
BAE SYSTEMS’ enhanced bulk CMOS
technology is radiation hardened through
the use of advanced and proprietary design,
layout, and process hardening techniques.
BAE SYSTEMS • 9300 Wellington Road • Manassas, Virginia 20110-4122
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