198A592-221 datasheet, PDF - EEWORLD Datasheet

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198A592-221: DescriptionStandard SRAM, 128KX8, 25ns, CMOS, CDFP32, 0.652 X 0.820 INCH, CERAMIC, DFP-32; Categorystorage storage; File Size353KB，12 Pages; ManufacturerBAE Systems

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198A592-221 Overview

Standard SRAM, 128KX8, 25ns, CMOS, CDFP32, 0.652 X 0.820 INCH, CERAMIC, DFP-32

198A592-221 Parametric

Parameter Name	Attribute value
Parts packaging code	DFP
package instruction	DFP,
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Is Samacsys	N
Maximum access time	25 ns
JESD-30 code	R-CDFP-F32
length	20.828 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class V
Maximum seat height	2.7432 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
total dose	1M Rad(Si) V
width	16.5608 mm
Base Number Matches	1

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128K x 8

Radiation Hardened

Static RAM – 5 V

Features

190A325

198A592

Product Description

Other

• Read/Write Cycle Times

≤25

ns, 30 ns, 40 ns (-55 to

125°C)

• SMD Number 5962H96877

• Asynchronous Operation

• CMOS or TTL Compatible I/O

• Single 5 V ±10% Power Supply

• Low Operating Power

• Packaging Options

• 40-Lead Flat Pack (0.775” x 0.710”)

• 40-Lead Flat Pack - Small Cavity (0.775” x 0.650”)

32-Lead Flat Pack (0.652” x 0.820”)

Radiation

• Fabricated with Bulk CMOS 0.5 µm Process

• Total Dose Hardness through 1x10

rad(Si)

• Neutron Hardness through 1x10

N/cm

• Dynamic and Static Transient Upset Hardness

through 1x10

rad(Si)/s

• Soft Error Rate of < 1x10

-11

Upsets/Bit-Day

• Dose Rate Survivability through 1x10

rad(Si)/s

• Latchup Free

General Description

The 128K x 8 radiation hardened static RAM

is a high performance 131,072 word x 8-bit

static random access memory with industry-

standard functionality. It is fabricated with

BAE SYSTEMS’ radiation hardened

technology and is designed for use in

systems operating in radiation

environments. The RAM operates over the

full military temperature range and requires

a single 5 V ±10% power supply. The RAM

is available with either TTL or CMOS

compatible I/O. Power consumption is

typically less than 20 mW/MHz in operation,

and less than 10 mW in the low power

disabled mode. The RAM read operation is

fully asynchronous, with an associated

typical access time of 19 nanoseconds.

BAE SYSTEMS’ enhanced bulk CMOS

technology is radiation hardened through

the use of advanced and proprietary design,

layout, and process hardening techniques.

BAE SYSTEMS • 9300 Wellington Road • Manassas, Virginia 20110-4122

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