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182A934-341

Description
Standard SRAM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28
Categorystorage    storage   
File Size390KB,12 Pages
ManufacturerBAE Systems
Download Datasheet Parametric View All

182A934-341 Overview

Standard SRAM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28

182A934-341 Parametric

Parameter NameAttribute value
Parts packaging codeDIP
package instructionDIP,
Contacts28
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Is SamacsysN
Maximum access time40 ns
JESD-30 codeR-CDIP-T28
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-PRF-38535 Class V
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal locationDUAL
total dose1M Rad(Si) V
Base Number Matches1
32K x 8
Radiation Hardened
Static RAM – 5 V
Features
167A690
182A934
Product Description
Other
• Read/Write Cycle Times
≤30
ns (-55 °C to 125°C)
• SMD Number 5962H92153
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V ±10% Power Supply
• Low Operating Power
• Packaging Options
• 36-Lead Flat Pack (0.630” x 0.650”)
• 28-Lead DIP, MIL-STD-1835, CDIP2-T28
Radiation
• Fabricated with Bulk CMOS 0.8 µm Process
• Total Dose Hardness through 1x10
6
rad(Si)
• Neutron Hardness through 1x10
14
N/cm
2
• Dynamic and Static Transient Upset Hardness
through 1x10
9
rad(Si)/s
• Soft Error Rate of < 1x10
-11
Upsets/Bit-Day
• Dose Rate Survivability through 1x10
12
rad(Si)/s
• Latchup Free
General Description
The 32K x 8 radiation hardened static RAM is a
high performance, low power device designed
and fabricated in 0.8 µm Radiation Hardened
Complementary Metal Oxide Semiconductor
(RHCMOS) technology. BAE SYSTEMS’ device
is designed for radiation environments using
industry standard functionality. The memory can
be personalized for either CMOS or Transistor
Transistor Logic (TTL) input receivers. The
SRAM operates over the full military temperature
range and requires a single 5 V ±10% power
supply. Power consumption is typically less than
20 mW/MHz in operation, and less than 10 mW in
the low power disabled mode. The SRAM read
operation is fully asynchronous, with an
associated typical access time of 20
nanoseconds.
BAE SYSTEMS’ bulk CMOS technology achieves
radiation hardening via a combination of process
technology enhancements and specific circuit
improvements.
BAE SYSTEMS • 9300 Wellington Road • Manassas, Virginia 20110-4122
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