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197A807-167T

Description
EEPROM, 32KX8, 60ns, Parallel, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, DFP-28
Categorystorage    storage   
File Size286KB,12 Pages
ManufacturerBAE Systems
Download Datasheet Parametric View All

197A807-167T Overview

EEPROM, 32KX8, 60ns, Parallel, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, DFP-28

197A807-167T Parametric

Parameter NameAttribute value
Parts packaging codeDFP
package instructionDFP,
Contacts28
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time60 ns
JESD-30 codeR-CDFP-F28
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height2.8956 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
width12.7 mm
Base Number Matches1
32K x 8
Radiation Hardened Programmable
Read Only Memory (PROM) – 5 V
Features
197A807
Product Description
Other
• Read/Write Cycle Times
≤45
ns (-55 °C to 125°C)
• SMD Number 5962R96891
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V ±10% Power Supply
• Low Operating Power
• Packaging Options
• 28-Lead Flat Pack (0.500” x 0.720”)
Radiation
• Fabricated with Bulk CMOS 0.8 µm Process
• Total Dose Hardness through 2x10
5
rad(Si)
• Neutron Hardness through 1x10
12
N/cm
2
• SEU Immune (No Latches)
• Latchup Free
General Description
The 32K x 8 radiation hardened PROM is
pinout, function and package compatible with
commercial 28C256 series 32K x EEPROMs,
such as SEEQ 28C256 and Atmel AT28C256.
The PROM is fabricated with BAE SYSTEMS’
QML-qualified radiation hardened technology,
and is designed for use in systems operating in
radiation environments.
The radiation hardened
Oxide-Nitride-Oxide (ONO) anti-fuse technology
features 0.8 micron, 5 V transistors in the data
path, and 1.0 micron, high voltage N and PFETs
in the programming path circuitry. The PROM
operates over the full military temperature
range, requires a single 5 V ±10% power
supply, and is available with either TTL or
CMOS compatible I/O. Power consumption is
typically 15 mW/MHz in operation and is less
than 10 mW/MHz in the low power disabled
mode. The PROM operation is fully
asynchronous, with an associated typical
access time of 27 nanoseconds. Synchronous
operation is also possible using CE as a clock.
BAE SYSTEMS’ enhanced bulk CMOS
technology is radiation hardened through the
use of advanced and proprietary design, layout,
and process hardening techniques.
BAE SYSTEMS • 9300 Wellington Road • Manassas, Virginia 20110-4122
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