AO4807
30V Dual P-Channel MOSFET
General Description
The AO4807 uses advanced trench technology to provide
excellent R
DS(ON)
, and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
= -4.5V)
-30V
-6A
< 35mΩ
< 58mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
Bottom
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
D2
G1
S1
G2
S2
Pin1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
-30
±20
-6
-5
-30
23
26
2
1.3
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
Rev 6: Nov 2011
www.aosmd.com
Page 1 of 6
AO4807
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-6A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-5A
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-6A
I
S
=-1A,V
GS
=0V
T
J
=125°
C
-1.3
-30
21
31.5
33
19
-0.8
-1
-3.5
760
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
1.5
140
95
3.2
13.6
V
GS
=-10V, V
DS
=-15V, I
D
=-6A
6.7
2.5
3.2
8
V
GS
=-10V, V
DS
=-15V, R
L
=2.7Ω,
R
GEN
=3Ω
I
F
=-6A, dI/dt=100A/µs
6
17
5
15
9.7
5.0
16
8
35
45
58
-1.85
Min
-30
-1
-5
±100
-2.4
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-6A, dI/dt=100A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Nov 2011
www.aosmd.com
Page 2 of 6
AO4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
-10V
35
30
25
-I
D
(A)
20
15
10
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
50
Normalized On-Resistance
45
40
R
DS(ON)
(mΩ)
Ω
35
30
25
20
15
10
0
5
10
15
20
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
V
GS
=-10V
V
GS
=-4.5V
V
GS
=-3V
5
0
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
-3.5V
-4V
-I
D
(A)
20
15
10
125°C
25°C
-6V
-5V
-4.5V
25
30
V
DS
=-5V
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
V
GS
=-10V
I
D
=-6A
17
5
V
GS
=-4.5V
2
I
D
=-5A
10
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
80
I
D
=-6A
60
R
DS(ON)
(mΩ)
Ω
-I
S
(A)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
2
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
40
125°C
25°C
40
125°C
20
0
Rev 6: Nov 2011
www.aosmd.com
Page 3 of 6
AO4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-6A
8
Capacitance (pF)
1200
1000
C
iss
800
600
400
200
0
0
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
14
0
C
rss
10
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
-V
GS
(Volts)
6
4
C
oss
2
0
100.0
-I
AR
(A) Peak Avalanche Current
100.0
T
A
=25°C
10.0
-I
D
(Amps)
T
A
=150°C
R
DS(ON)
limited
10µs
100µs
1ms
10ms
1.0
T
A
=100°C
0.1
T
A
=125°C
10.0
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 9: Single Pulse Avalanche capability (Note C)
1
0.0
0.01
T
J(Max)
=150°C
T
A
=25°C
10s
DC
1
10
-V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
100
10000
T
A
=25°C
1000
Power (W)
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 6: Nov 2011
www.aosmd.com
Page 4 of 6
AO4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
T
0.01
Rev 6: Nov 2011
www.aosmd.com
Page 5 of 6
Talking
京公网安备 11010802033920号
EEWORLD
