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CD54HC00

Description
CD54HC00 High Speed CMOS Logic Quad 2-Input NAND Gates
Categorysemiconductor    logic   
File Size966KB,17 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Stay tuned Parametric Compare

CD54HC00 Overview

CD54HC00 High Speed CMOS Logic Quad 2-Input NAND Gates

CD54HC00 Parametric

Parameter NameAttribute value
IOL(Max)(mA)4
Technology FamilyHC
RatingMilitary
Output typePush-Pull
Input typeStandard CMOS
IOH(Max)(mA)-4
VCC(Max)(V)6
Operating temperature range(C)-55 to 125
VCC(Min)(V)2
Package GroupCDIP|14

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Description CD54HC00 High Speed CMOS Logic Quad 2-Input NAND Gates High Speed CMOS Logic Quad 2-Input NAND Gates 14-CDIP -55 to 125 High Speed CMOS Logic Quad 2-Input NAND Gates 14-CDIP -55 to 125 High Speed CMOS Logic Quad 2-Input NAND Gates 14-CDIP -55 to 125 High Speed CMOS Logic Quad 2-Input NAND Gates 14-CDIP -55 to 125 High Speed CMOS Logic Quad 2-Input NAND Gates 14-CDIP -55 to 125 CD54HCT00 High Speed CMOS Logic Quad 2-Input NAND Gates CD74HC00 High Speed CMOS Logic Quad 2-Input NAND Gates CD74HCT00 High Speed CMOS Logic Quad 2-Input NAND Gates
Brand Name - Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments - - -
Parts packaging code - DIP DIP DIP DIP DIP - - -
package instruction - DIP, DIP14,.3 DIP-14 DIP-14 DIP, DIP14,.3 DIP-14 - - -
Contacts - 14 14 14 14 14 - - -
Reach Compliance Code - not_compliant not_compliant not_compliant not_compliant not_compliant - - -
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 - - -
series - HCT HC/UH HC/UH HCT HCT - - -
JESD-30 code - R-GDIP-T14 R-CDIP-T14 R-CDIP-T14 R-CDIP-T14 R-CDIP-T14 - - -
length - 19.56 mm 19.56 mm 19.56 mm 19.56 mm 19.56 mm - - -
Load capacitance (CL) - 50 pF 50 pF 50 pF 50 pF 50 pF - - -
Logic integrated circuit type - NAND GATE NAND GATE NAND GATE NAND GATE NAND GATE - - -
MaximumI(ol) - 0.004 A 0.004 A 0.004 A 0.004 A 0.004 A - - -
Number of functions - 4 4 4 4 4 - - -
Number of entries - 2 2 2 2 2 - - -
Number of terminals - 14 14 14 14 14 - - -
Maximum operating temperature - 125 °C 125 °C 125 °C 125 °C 125 °C - - -
Minimum operating temperature - -55 °C -55 °C -55 °C -55 °C -55 °C - - -
Package body material - CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - - -
encapsulated code - DIP DIP DIP DIP DIP - - -
Encapsulate equivalent code - DIP14,.3 DIP14,.3 DIP14,.3 DIP14,.3 DIP14,.3 - - -
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - -
Package form - IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE - - -
method of packing - TUBE TUBE TUBE TUBE TUBE - - -
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - -
power supply - 5 V 2/6 V 2/6 V 5 V 5 V - - -
Maximum supply current (ICC) - 0.04 mA 0.04 mA 0.04 mA 0.04 mA 0.04 mA - - -
Prop。Delay @ Nom-Sup - 33 ns 27 ns 27 ns 30 ns 30 ns - - -
propagation delay (tpd) - 135 ns 135 ns 135 ns 30 ns 30 ns - - -
Certification status - Qualified Not Qualified Not Qualified Not Qualified Not Qualified - - -
Schmitt trigger - NO NO NO NO NO - - -
Maximum seat height - 5.08 mm 5.08 mm 5.08 mm 5.08 mm 5.08 mm - - -
Maximum supply voltage (Vsup) - 5.5 V 6 V 6 V 5.5 V 5.5 V - - -
Minimum supply voltage (Vsup) - 4.5 V 2 V 2 V 4.5 V 4.5 V - - -
Nominal supply voltage (Vsup) - 4.5 V 4.5 V 4.5 V 5 V 5 V - - -
surface mount - NO NO NO NO NO - - -
technology - CMOS CMOS CMOS CMOS CMOS - - -
Temperature level - MILITARY MILITARY MILITARY MILITARY MILITARY - - -
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - - -
Terminal pitch - 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm - - -
Terminal location - DUAL DUAL DUAL DUAL DUAL - - -
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - -
width - 6.67 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm - - -
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