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35SGQ060

Description
35 A, 60 V, SILICON, RECTIFIER DIODE, TO-254AA
CategoryDiscrete semiconductor    diode   
File Size47KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

35SGQ060 Overview

35 A, 60 V, SILICON, RECTIFIER DIODE, TO-254AA

35SGQ060 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
package instructionS-MSFM-P3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current35 A
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountNO
technologySCHOTTKY
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
PD -94220A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
35SGQ060
35 Amp, 60V
Major Ratings and Characteristics
Characteristics
I
F(AV)
V
RRM
I
FSM
@ tp = 8.3ms half-sine
V
F
@ 35Apk, T
J
=125°C
35SGQ060 Units
35
60
400
A
V
A
Description/Features
The 35SGQ060 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermeticly isolated
TO-254AA package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Lightweight
0.92
V
T
J
,T
stg
Operating and storage
-55 to 150
°C
.12 ( .005 )
CASE STYLE
3.78 ( .149 )
3.53 ( .139 )
-A -
13.84 ( .545 )
13.59 ( .535 )
6.60 ( .260 )
6.32 ( .249 )
-B -
1.27 ( .050 )
1.02 ( .040 )
17.40 ( .685 )
16.89 ( .665 )
31.40 ( 1.235 )
30.39 ( 1.199 )
20.32 ( .800 )
20.07 ( .790 )
13.84 ( .545 )
13.59 ( .535 )
LEG EN D
1 - CO LL
2 - E MIT
3 - GA TE
1
2
3
-C -
3X
3.81 ( .150 )
2X
1.14 ( .045 )
0.89 ( .035 )
.50 ( .020 )
.25 ( .010 )
M C A M B
M C
3.81 ( .150 )
CATHODE OPEN ANODE
IR Case Style TO-254AA
www.irf.com
1
08/27/01

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