LL103A THRU LL103C
Schottky Diodes
MiniMELF
FEATURES
♦
For general purpose applications.
♦
The LL103A, B, C is a metal-on-silicon
Schottky barrier device which is pro-
tected by a PN junction guard ring.
∅
.063 (1.6)
.055 (1.4)
Cathode Mark
♦
The low forward voltage drop and fast switch-
ing make it ideal for protection of MOS devices,
steering, biasing and coupling diodes
for fast switching and low logic level applications.
Other applications are click suppression, efficient
full wave bridges in telephone subsets, and blocking
diodes in rechargeable low voltage battery systems.
the type designation SD103A, B, C, and in the
SOD-123 case with type designation
SD103AW, SD103BW, SD103CW.
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
♦
This diode is also available in DO-35 case with
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case:
MiniMELF Glass Case SOD-80C
Weight:
approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Peak Inverse Voltage
LL103A
LL103B
LL103C
V
RRM
V
RRM
V
RRM
P
tot
Value
40
30
20
400
1)
Unit
V
V
V
mW
Power Dissipation (Infinite Heatsink)
T
C
=
3
/
8
″
from Body
derates at 4 mW/°C to 0 at 125 °C
Junction Temperature
Storage Temperature Range
Single Cycle Surge
60-Hz Sine Wave
1)
T
j
T
S
I
FSM
125
–55 to +150
15
°C
°C
A
Valid provided that electrodes are kept at ambient temperature.
4/98
LL103A THRU LL103C
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Leakage Current
at V
R
= 30 V
at V
R
= 20 V
at V
R
= 10 V
Forward Voltage Drop
at I
F
= 20 mA
at I
F
= 200 mA
Junction Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 50 mA to 200 mA, recover to 0.1 I
R
LL103A
LL103B
LL103C
I
R
I
R
I
R
V
F
V
F
C
tot
t
rr
Min.
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
50
10
Max.
5
5
5
0.37
0.6
–
–
Unit
µA
µA
µA
V
V
pF
ns
RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C
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