LL101A THRU LL101C
Schottky Diodes
MiniMELF
FEATURES
♦
For general purpose applications.
♦
The LL101 series is a metal-on-silicon
∅
.063 (1.6)
.055 (1.4)
Cathode Mark
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
Schottky barrier device which is protected
by a PN junction guard ring. The low forward
voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low logic
level applications.
♦
This diode is also available in the DO-35 case with type
designation SD101A, B, C, and in the SOD-123 case
with type designation SD101AW, SD101BW, SD101CW.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case:
MiniMELF Glass Case (SOD-80)
Weight:
approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Peak Inverse Voltage
LL101A
LL101B
LL101C
V
RRM
V
RRM
V
RRM
P
tot
I
FSM
T
j
T
S
Value
60
50
40
400
1)
2
125
–55 to +150
Unit
V
V
V
mW
A
°C
°C
Power Dissipation (Infinite Heatsink)
Max. Single Cycle Surge
10
µs
Square Wave
Junction Temperature
Storage Temperature Range
1)
Valid provided that electrodes are kept at ambient temperature.
4/98
LL101A THRU LL101C
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Breakdown Voltage
at I
R
= 10
µA
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
V
(BR)R
V
(BR)R
V
(BR)R
I
R
I
R
I
R
V
F
V
F
V
F
V
F
V
F
V
F
C
tot
C
tot
C
tot
t
rr
Min.
60
50
40
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max.
–
–
–
200
200
200
0.41
0.4
0.39
1
0.95
0.9
2.0
2.1
2.2
1
Unit
V
V
V
nA
nA
nA
V
V
V
V
V
V
pF
pF
pF
ns
Leakage Current
at V
R
= 50 V
at V
R
= 40 V
at V
R
= 30 V
Forward Voltage Drop
at I
F
= 1 mA
at I
F
= 15 mA
Junction Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 5 mA, recover to 0.1 I
R
RATINGS AND CHARACTERISTIC CURVES LL101A THRU LL101C
FPGA/CPLD
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