2SC3356R-T1B datasheet, PDF - EEWORLD Datasheet

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2SC3356R-T1B: DescriptionRF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size768KB，8 Pages; ManufacturerCalifornia Eastern Labs; Websitehttp://www.cel.com/

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2SC3356R-T1B Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-3

2SC3356R-T1B Parametric

Parameter Name	Attribute value
package instruction	MINIMOLD PACKAGE-3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	1 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	7000 MHz
Base Number Matches	1

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NPN SILICON RF TRANSISTOR

NE85633 / 2SC3356

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

3-PIN MINIMOLD

FEATURES

• Low noise and high gain : NF = 1.1 dB TYP., G

= 11 dB TYP. @ V

= 10 V, I

= 7 mA, f = 1 GHz

• High power gain : MAG = 13 dB TYP. @ V

= 10 V, I

= 20 mA, f = 1 GHz

ORDERING INFORMATION

Part Number

NE85633-A

2SC3356

NE85633-T1B-A

2SC3356-T1B

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side of the tape

Remark

To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

= +25C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

CBO

CEO

EBO

tot

Note

stg

Ratings

3.0

100

200

150

65

to +150

Unit

C

Note

Free air

Document No. PU10209EJ02V0DS (2nd edition)

Date Published June 2004 CP(K)

The mark



shows major revised points.

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