JAN2N1479 datasheet, PDF - EEWORLD Datasheet

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JAN2N1479: DescriptionPower Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size871KB，14 Pages; ManufacturerSilicon Transistor Corp.oration

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JAN2N1479 Overview

Power Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin

JAN2N1479 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	5 W
Certification status	Not Qualified
Guideline	MIL
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	1.5 MHz
Base Number Matches	1

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JAN2N1479 Related Products

	JAN2N1479	JAN2N1482	JAN2N1480	JAN2N1481
Description	Power Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin	Power Bipolar Transistor, 1.5A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin	Power Bipolar Transistor, 1.5A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin	Power Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1.5 A	1.5 A	1.5 A	1.5 A
Collector-emitter maximum voltage	40 V	55 V	55 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	35	20	35
JEDEC-95 code	TO-5	TO-5	TO-5	TO-5
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	5 W	5 W	5 W	5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	MIL	MIL	MIL	MIL
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	1.5 MHz	1.5 MHz	1.5 MHz	1.5 MHz
Base Number Matches	1	1	1	1

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