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LM5113-Q1

Description
LM5113-Q1 Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs
Categorysemiconductor    Power management   
File Size2MB,27 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Environmental Compliance
Stay tuned Parametric Compare

LM5113-Q1 Overview

LM5113-Q1 Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs

LM5113-Q1 Parametric

Parameter NameAttribute value
Prop delay(ns)30
RatingAutomotive
Peak output current(A)5
Package GroupWSON|10
Rise time(ns)7
Approx. price(US$)1.76 | 1ku
Power switchMOSFET,GaNFET
Input thresholdTTL
Fall time(ns)3.5
Bus voltage(V)90
Input VCC(Max)(V)5.5
Input VCC(Min)(V)4.5
Operating temperature range(C)-40 to 125
Number of channels(#)2

LM5113-Q1 Related Products

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Description LM5113-Q1 Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125

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