
LM5113-Q1 Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs
| Parameter Name | Attribute value |
| Prop delay(ns) | 30 |
| Rating | Automotive |
| Peak output current(A) | 5 |
| Package Group | WSON|10 |
| Rise time(ns) | 7 |
| Approx. price(US$) | 1.76 | 1ku |
| Power switch | MOSFET,GaNFET |
| Input threshold | TTL |
| Fall time(ns) | 3.5 |
| Bus voltage(V) | 90 |
| Input VCC(Max)(V) | 5.5 |
| Input VCC(Min)(V) | 4.5 |
| Operating temperature range(C) | -40 to 125 |
| Number of channels(#) | 2 |
| LM5113-Q1 | LM5113QDPRRQ1 | |
|---|---|---|
| Description | LM5113-Q1 Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs | Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125 |