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JANTX2N2060L

Description
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, SIMILAR TO TO-77 (TO-99), 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size100KB,16 Pages
ManufacturerRaytheon Company
Websitehttps://www.raytheon.com/
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JANTX2N2060L Overview

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, SIMILAR TO TO-77 (TO-99), 6 PIN

JANTX2N2060L Parametric

Parameter NameAttribute value
package instructionSIMILAR TO TO-77 (TO-99), 6 PIN
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage60 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-78
JESD-30 codeO-MBCY-W6
Number of components2
Number of terminals6
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-S-19500/270E
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Base Number Matches1
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 18 March 2005.
INCH-POUND
MIL-PRF-19500/270J
18 December 2004
SUPERSEDING
MIL-PRF-19500/270H
24 July 2003
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN,
SILICON, TYPES 2N2060 AND 2N2060L,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN,
silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-77 or TO-99).
1.3 Maximum ratings unless otherwise specified T
A
= +25°C.
P
T1
T
A
= +25°C
One
section
(1)
mW
540
Both
sections
(2)
mW
600
P
T2
T
C
= +25°C
One
section
(1)
W
1.5
Both
sections
(2)
W
2.12
mA dc
500
V dc
100
V dc
60
V dc
7
°C
-65 to +200
I
C
V
CBO
V
CEO
V
EBO
T
STG
and T
J
(1) For T
A
> +25°C, derate linearly 3.08 mW/°C one section, 3.48 mW/°C both sections.
(2) For T
C
> +25°C, derate linearly 8.6 mW/°C one section, 12.1 mW/°C both sections.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil
.
AMSC N/A
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