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●Handle
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copyright law. Any reproduction, full or in part, of this material is prohibited
without the express written permission of the company.
●When
using the products covered herein, please observe the conditions written herein
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(1) The products covered herein are designed and manufactured for the following
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to observe the precautions given in Paragraph (2). Never use the products
for the equipment listed in Paragraph (3).
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electronics
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and measuring equipment
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equipment
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appliance
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equipment other than for trunk lines
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equipment which demands high reliability, should first contact a sales
representative of the company and then accept responsibility for incorporating
into the design fail-safe operation, redundancy, and other appropriate
measures for ensuring reliability and safety of the equipment and the overall system.
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transportation equipment
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leak detectors and automatic cutoff devices
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safety devices and safety equipment,etc.
(3) Do not use the products covered herein for the following equipment which
demands extremely high performance in terms of functionality, reliability, or accuracy.
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equipment for trunk lines
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equipment for the nuclear power industry
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(4) Please direct all queries and comments regarding the interpretation of the
above three Paragraphs to a sales representative of the company.
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LH28F008SAN-12
8M-BIT (1MBit x 8) FLASH MEMORY
1.
FEATURES
• Very High-Performance Read
- 120ns Maximum Access Time
• Operating Temperature
- 0˚C to +70˚C
• SRAM-Compatible Write Interface
• Hardware Data Protection Feature
- Erase/Write Lockout during Power Transi-
tions
• Industry Standard Packaging
- 44-Lead PSOP
• ETOX™* Nonvolatile Flash Technology
- 12V Byte Write/Block Erase
• CMOS Process (P-type silicon substrate)
• Not designed or rated as radiation hardened
SHARP’s LH28F008SAN-12 8 Mbit Flash Memory is the highest density nonvolatile read/write solution for solid state
storage. The LH28F008SA’s extended cycling, symmetrically blocked architecture, fast access time, write automation and
low power consumption provide a more reliable, lower power, lighter weight and higher performance alternative to tradi-
tional rotating disk technology. The LH28F008SAN-12 brings new capabilities to portable computing. Application and
operating system software stored in resident flash memory arrays provide instant-on rapid execute-in-place and protection
from obsolescence through in-system software updates. Resident software also extends system battery life and increases
reliability by reducing disk drive accesses.
For high density data acquisition applications, the LH28F008SAN-12 offers a more cost-effective and reliable alternative to
SRAM and battery. Traditional high density embedded applications, such as telecommunications, can take advantage of
the LH28F008SA’s nonvolatility, blocking and minimal system code requirements for flexible firmware and modular soft-
ware designs.
The LH28F008SAN-12 is offered in 44-lead PSOP package. Pin assignments simplify board layout when integrating
multiple devices in a flash memory array or subsystem. This device uses an integrated Command User Interface and state
machine for simplified block erasure and byte write. The LH28F008SAN-12 memory map consists of 16 separately
erasable 64K-byte blocks.
SHARP’s LH28F008SAN-12 employs advanced CMOS circuitry for systems requiring low power consumption and noise
immunity. Its 120ns access time provides superior performance when compared with magnetic storage media. A deep
powerdown mode lowers power consumption to 50µW maximum thru V
CC
, crucial in portable computing, handheld instru-
mentation and other low-power applications. The RP# power control input also provides absolute data protection during
system powerup/down.
•High-Density Symmetrically Blocked Architec-
ture
- Sixteen 64K-Byte Blocks
•Extended Cycling Capability
- 100,000 Block Erase Cycles
- 1.6 Million Block Erase Cycles per Chip
•Automated Byte Write and Block Erase
- Command User Interface
- Status Register
•System Performance Enhancements
- RY/BY# Status Output
- Erase Suspend Capability
•Deep-Powerdown
Mode
- 10
µ
A I
CC
Maximum
* ETOX is a trademark of Intel Corporation.
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