P
RODUCT
S
PECIFICATIONS
®
Integrated Circuits Group
LH28F160S3NS-L10
Flash Memory
16M (2MB × 8/1MB × 16)
(Model No.: LHF16KA1)
Spec No.: EL128039
Issue Date: August 22, 2000
SHARP
LHFlGKAl
l
Handle this document carefully for it contains material protected by international copyright
law. Any reproduction, full or in part, of this material is prohibited without the express
written permission of the company.
l
When using the products covered herein, please observe the conditions written herein
and the precautions outlined in the following paragraphs. in no event shall the company
be liable for any damages resulting from failure to strictly adhere to these conditions and
precautions.
(1) The products covered herein are designed and manufactured for the following
application areas. When using the products covered herein for the equipment listed
in Paragraph (2), even for the following application areas, be sure to observe the
precautions given in Paragraph (2). Never use the products for the equipment listed
in Paragraph (3).
l
Office electronics
l
instrumentation and measuring equipment
*Machine tools
l
Audiovisual equipment
*Home appliance
*Communication equipment other than for trunk lines
(2) Those contemplating using the products covered herein for the following equipment
which demands high reliability, should first contact a sales representative of the
company and then accept responsibility for incorporating into the design fail-safe
operation, redundancy, and other appropriate measures for ensuring reliability and
safety of the equipment and the overall system.
l
Control and safety devices for airplanes, trains, automobiles,
transportation equipment
aMainframe computers
l
Traff ic control systems
*Gas leak detectors and automatic cutoff devices
ORescue and security equipment
mother safety devices and safety equipment, etc.
and other
(3) Do not use the products covered herein for the following equipment which
dem?nds
extremely high performance in terms of functionality, reliability, or accuracy.
*Aerospace equipment
*Communications equipment for trunk lines
*Control equipment for the nuclear power industry
*Medical equipment related to life support, etc.
.
(4) Please direct all queries and comments regarding the interpretation of the above
three Paragraphs to a sales representative of the company.
l Please direct all queries regarding the products covered herein to a sales representative
of the company.
Rev.1.9
SHARP
LHFlGKAl
1
CONTENTS
PAGE
I INTRODUCTION
......................................................
3
3
6
7
7
7
7
7
7
8
8
8
8
11
11
11
11
12
12
13
5 DESIGN CONSIDERATIONS
................................
PAGE
.30
.30
1 .l Product Overview.. ..............................................
! PRINCIPLES OF OPERATION.. ..............................
2.1 Data Protection ...................................................
I BUS OPERATION.. ..................................................
3.1 Read ...................................................................
3.2 Output Disable .....................................................
3.3 Standby.. .............................................................
3.4 Deep Power-Down ..............................................
3.5 Read Identifier Codes Operation.. .......................
3.6 Query Operation.. ................................................
3.7 Write.. ..................................................................
COMMAND DEFINITIONS.. .....................................
4.1 Read Array Command.. .....................................
4.2 Read Identifier Codes Command.. ....................
4.3 Read Status Register Command.. .....................
4.4 Clear Status Register Command.. .....................
4.5 Query Command.. .............................................
4.51 Block Status Register.. ................................
4.5.2 CFI Query Identification String.. ...................
4.5.3 System Interface Information.. .....................
4.5.4 Device Geometry Definition .........................
5.1 Three-Line Output Control ................................
5.2 STS and Block Erase, Full Chip Erase, (Multi)
Word/Byte Write and Block Lock-Bit Configuration
.30
Polling.. .............................................................
5.3 Power Supply Decoupling .................................
.30
5.4 V,, Trace on Printed Circuit Boards.. ............... .3r
5.5 Vc,, V,,, RP# Transitions.. ...............................
5.6 Power-Up/Down Protection.. .............................
5.7 Power Dissipation ..............................................
6 ELECTRICAL
SPECIFICATIONS.. ........................
6.1 Absolute Maximum Ratings ...............................
6.2 Operating Conditions ........................................
3’
.3’
3’
.3:
3:
.3:
3:
6.2.1 Capacitance .................................................
6.2.2 AC Input/Output Test Conditions.. ............... .3:
6.2.3 DC Characteristics.. .....................................
6.2.4
6.2.5
6.2.6
6.2.7
AC Characteristics - Read-Only Operations
AC Characteristics - Write Operations.. .......
Alternative CE#Controlled Writes.. .............
Reset Operations .........................................
.3L
.3(
.3E
.41
4:
6.2.8 Block Erase, Full Chip Erase, (Multi)
Word/Byte Write and Block Lock-Bit
Configuration
Performance.. ........................
.44
.4E
.4E
7
13
14
4.5.5 SCS OEM Specific Extended Query Table .. 14
4.6 Block Erase Command.. ....................................
15
4.7 Full Chip Erase Command ................................
15
16
4.8 Word/Byte Write Command.. .............................
4.9 Multi Word/Byte Write Command.. .................... 16
17
4.11 (Multi) Word/Byte Write Suspend Command ... 17
4.12 Set Block Lock-Bit Command.. ........................ 18
4.13 Clear Block Lock-Bits Command.. ...................
4.14 STS Configuration Command .........................
18
19
4.10 Block Erase Suspend Command.. ...................
7 ADDITIONAL INFORMATION ...............................
7.1 Ordering Information .........................................
8 PACKAGE AND PACKING SPEClFlCATlbN........4
.
Rev. 1.9
SHARP
LHFlGKAl
2
LH28F160S3NSLIO
16M-BIT (2MBx8/1 MBxl6)
Smart 3 Flash MEMORY
a
Smart 3 Technology
- 2.7V or 3.3V VCC
- 2.7V, 3.3V or 5V Vpp
n
Enhanced Data Protection Features
- Absolute Protection with VpP=GND
- Flexible Block Locking
- Erase/Write Lockout during Power
Transitions
Extended Cycling Capability
- 100,000 Block Erase Cycles
- 3.2 Million Block Erase Cycles/Chip
Low Power Management
- Deep Power-Down Mode
- Automatic Power Savings Mode
Decreases ICC in Static Mode
Automated Write and Erase
- Command User Interface
- Status Register
Industry-Standard Packaging
- 56-Lead SSOP
ETOXTM’ V Nonvolatile
Technology
Flash
n Common Flash Interface (CFI)
- Universal & Upgradable Interface
n
n
Scalable Command Set (SCS)
High Speed Write Performance
- 32 Bytes x 2 plane Page Buffer
- 2.7 @Byte Write Transfer Rate
High Speed Read Performance
- 1OOns(3.3Vk0.3V), 120ns(2.7V-3.6V)
Operating Temperature
- 0°C to +7O”C
n
n
n
n
n
n Enhanced Automated Suspend Options
- Write Suspend to Read
- Block Erase Suspend to Write
- Block Erase Suspend to Read
I
High-Density Symmetrically-Blocked
Architecture
- Thirty-two 64K-byte Erasable Blocks
SRAM-Compatible
User-Configurable
Write Interface
x8 or x16 Operation
n
n
n
n
CMOS Process
(P-type silicon substrate)
Not designed or rated as radiation
hardened
.
I
I
SHARP’s LH28F160S3NS-L10
Flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile,
,ead/write storage solution for a wide range of applications. Its symmetrically-blocked architecture, flexible voltage
Ind extended cycling provide for highly flexible component suitable for resident flash arrays, SlMMs and memory
:ards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For
iecure code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the LH28F160S3NS-L10
offers three levels of protection: absolute protection with V,, at
SND, selective hardware block locking, or flexible software block locking. These alternatives give designers
ultimate control of their code security needs.
-he LH28F160S3NS-LlO
is conformed to the flash Scalable Command Set (SCS) and the Common Flash Interface
CFI) specification which enable universal and upgradable interface, enable the highest system/device data transfer
ates and minimize device and system-level implementation costs.
-he LH28F160S3NSLlO
is manufactured on SHARP’s 0.35pm ETOX TM* V process technology.
idustry-standard package: the 56-Lead SSOP ideal for board constrained applications.
ETOX is a trademark of Intel Corporation.
Rev.1.9
It come in
SHARI=
LHFlGKAl
1 INTRODUCTION
This
datasheet
contains
LH28F160S3NS-LlO
specifications. Section 1 provides a flash memory
overview. Sections 2, 3, 4, and 5 describe the
memory organization and functionality. Section 6
covers electrical specifications.
3
write suspend mode enables the system to read data
or execute code from any other flash memory array
location.
Individual block locking uses a combination of bits
and WP#, Thirty-two block lock-bits, to lock and
unlock blocks. Block lock-bits gate block erase, full
chip erase and (multi) word/byte write operations.
Block lock-bit configuration operations (Set Block
Lock-Bit and Clear Block Lock-Bits commands) set
and cleared block lock-bits.
The status register indicates when the WSM’s block
erase, full chip erase, (multi) word/byte write or block
lock-bit configuration operation is finished.
The STS output gives an additional indicator of WSM
activity by providing both a hardware signal of status
(versus software
polling) and status masking
(interrupt masking for background block erase, for
example). Status polling using STS minimizes both
CPU overhead and system power consumption. STS
pin can be configured to different states using the
Configuration command. The STS pin defaults to
RY/BY# operation. When low, STS indicates that the
WSM is performing a block erase, full chip erase,
(multi) word/byte write or block lock-bit configuration.
STS-High Z indicates that the WSM is ready for a
new command, block erase is suspended and (multi)
word/byte write are inactive, (multi) word/byte write
are suspended, or the device is in deep power-down
mode. The other 3 alternate configurations are all
pulse mode for use as a system interrupt.
The access time is 1OOns (tAvav) over the
commercial temperature range (0% to +7O”C) and
Vc, supply voltage range of 3.OV-3.6V. At lower V,,
voltage, the access time is 120ns (2.7V-3.6V).
The Automatic
Power Savings (APS) feature
substantially reduces active current when the device
is in static mode (addresses not switching). In APS
mode, the typical lCCR current is 3 mA at 33V V,,.
When either CE,# or CE,#, and RP# pins are at Vcc,
the loo CMOS standby mode is enabled. When the
RP# pin is. at GND, deep power-down mode is
enabled which minimizes power consumption
and
provides write protection during reset. A reset time
(tpHQv) is required from RP# switching high until
outputs are valid. Likewise, the device has a wake
time (tPHEL) from RP#-high until writes to the CUI are
recognized. With RP# at GND, the WSM is reset and
the status register is cleared.
The device is available in 56-Lead SSOP (Shrink
Small Outline Package). Pinout is shown in Figure 2.
1.1 Product Overview
The LH28F160S3NS-LlO
is a high-performance 16M-
bit Smart
3 Flash
memory
organized
as
2MBx8/1MBxlG.
The 2MB of data is arranged in
thirty-two 64K-byte blocks which are individually
erasable, lockable, and unlockable in-system. The
memory map is shown in Figure 3.
Smart 3 technology provides a choice of Vcc and
V,, combinations, as shown in Table 1, to meet
system performance and power expectations. 2.N
Vc, consumes approximately one-fifth the power of
5v Vcc. VP, at 2.7V, 3.3V and SJ eliminates the
need for a separate 12V converter, while V,,=5V
maximizes erase and write performance. In addition
to flexible erase and program voltages, the dedicated
V,,
pin gives complete data protection when
vPPsvPPLK.
Table 1. I/,.. and Vpp Voltage Combinations
Offe%d by Smart 3 Technology
Vcc Voltage
Vpp Voltage
2.7V
2.7V, 3.3V, 5V
3.3v
3.3v, 5v
Internal
and
detection
Circuitry
VCC
VP,
automatically configures the device for optimized
*cad and write operations.
4 Command
User Interface (CUI) serves as the
nterface between the system processor and internal
operation of the device. A valid command sequence
written to the CUI initiates device automation. An
nternal Write State Machine (WSM) automatically
mecutes the algorithms and timings necessary for
Ilock erase, full chip erase, (multi) word/byte write
and block lock-bit configuration operations.
4 block erase operation erases one of the device’s
i4K-byte blocks typically within 0.41s (3.3V Vcc, 5V
Ipp) independent of other blocks. Each block can be
ndependently
erased 100,000 times (3.2 million
Ilock erases per device). Block erase suspend mode
allows system software to suspend block erase to
ead or write data from any other block.
4 word/byte write is performed in byte increments
ypically within 12.95u.s (3.3V Vcc, 5V V,,). A multi
vord/byte write has high speed write performance of
!.7us/byte (3.3V V,,, 5V VP,). (Multi) Word/byte
Rev. 1.9
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