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AH224-75

Description
Variable Capacitance Diode, Very High Frequency to KA Band, 1.45pF C(T), 15V, Gallium Arsenide, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size179KB,4 Pages
ManufacturerThales Group
Download Datasheet Parametric View All

AH224-75 Overview

Variable Capacitance Diode, Very High Frequency to KA Band, 1.45pF C(T), 15V, Gallium Arsenide, Hyperabrupt

AH224-75 Parametric

Parameter NameAttribute value
package instructionO-XEMW-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage15 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Nominal diode capacitance1.45 pF
Diode component materialsGALLIUM ARSENIDE
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO KA BAND
JESD-30 codeO-XEMW-F2
Number of components1
Number of terminals2
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor3000
Maximum reverse current0.1 µA
Reverse test voltage10 V
surface mountYES
Terminal formFLAT
Terminal locationEND
Varactor Diode ClassificationHYPERABRUPT
Base Number Matches1
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