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2N3490

Description
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size70KB,1 Pages
ManufacturerSilicon Transistor Corp.oration
Download Datasheet Parametric View All

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Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin

2N3490 Parametric

Parameter NameAttribute value
package instructionPOST/STUD MOUNT, O-MUPM-D3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-61
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)117 W
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Base Number Matches1
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