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2N1902

Description
Power Bipolar Transistor, 10A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size70KB,1 Pages
ManufacturerSilicon Transistor Corp.oration
Download Datasheet Parametric View All

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2N1902 Overview

Power Bipolar Transistor, 10A I(C), NPN

2N1902 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)10
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)125 W
surface mountNO
Nominal transition frequency (fT)50 MHz
Base Number Matches1

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