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2N5612

Description
Power Bipolar Transistor, 2.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-213, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size67KB,1 Pages
ManufacturerSilicon Transistor Corp.oration
Download Datasheet Parametric View All

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Power Bipolar Transistor, 2.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-213, Metal, 2 Pin

2N5612 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2.5 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-213
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)25 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
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