2N2015 datasheet, PDF - EEWORLD Datasheet

2N2015: DescriptionPower Bipolar Transistor, 10A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-36, Metal, 2 Pin, TO-36, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size190KB，4 Pages; ManufacturerSilicon Transistor Corp.oration

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2N2015 Overview

Power Bipolar Transistor, 10A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-36, Metal, 2 Pin, TO-36, 2 PIN

Parameter Name	Attribute value
Parts packaging code	TO-36
package instruction	POST/STUD MOUNT, O-MBPM-D2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-36
JESD-30 code	O-MBPM-D2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	0.012 MHz
Base Number Matches	1

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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