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2SC5616

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, M13, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size19KB,2 Pages
ManufacturerCalifornia Eastern Labs
Websitehttp://www.cel.com/
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2SC5616 Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, M13, 3 PIN

2SC5616 Parametric

Parameter NameAttribute value
package instructionM13, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage6 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9500 MHz
Base Number Matches1
PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE688M13
FEATURES
NEW MINIATURE M13 PACKAGE:
– Small transistor outline –
1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 9.5 GHz
LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
HIGH COLLECTOR CURRENT:
I
C
MAX = 100 mA
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M13
+0.1
0.5 –0.05
+0.1
0.15 –0.05
1
0.35
0.3
2
XX
1
+0.1
1.0 –0.05
3
0.7
0.35
2
+0.1
0.15 –0.05
0.2
3
+0.1
0.2 –0.05
0.1
0.1
0.2
DESCRIPTION
The NE688M13 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M13" package
is ideal for today's portable wireless applications. The NE688
is also available in chip and six different low cost plastic surface
mount package styles.
0.5±0.05
+0.1
0.125 –0.05
Bottom View
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
GHz
dB
dB
dB
dB
µA
µA
pF
0.7
3
80
MIN
4
NE688M13
2SC5616
M13
TYP
5
9.5
1.9
1.7
4
8
145
0.1
0.1
0.8
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Forward Current Gain at V
CE
= 1 V, I
C
= 3 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
µs,
duty cycle
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories

2SC5616 Related Products

2SC5616
Description RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, M13, 3 PIN
package instruction M13, 3 PIN
Contacts 3
Reach Compliance Code compliant
ECCN code EAR99
Maximum collector current (IC) 0.1 A
Collector-based maximum capacity 0.8 pF
Collector-emitter maximum voltage 6 V
Configuration SINGLE
highest frequency band L BAND
JESD-30 code R-PDSO-F3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type NPN
Certification status Not Qualified
surface mount YES
Terminal form FLAT
Terminal location DUAL
transistor applications AMPLIFIER
Transistor component materials SILICON
Nominal transition frequency (fT) 9500 MHz
Base Number Matches 1

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