PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE688M23
FEATURES
•
NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 9.5 GHz
LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
HIGH COLLECTOR CURRENT:
I
C
MAX = 100 mA
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
0.5
•
•
•
1
0.25
1.0
0.4
2
3
0.25
DESCRIPTION
The NE688M23 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/ceramic substrate style "M23"
package is ideal for today's portable wireless applications. The
NE688 is also available in chip and six different low cost plastic
surface mount package styles.
0.6
0.15
0.2
0.15
BOTTOM VIEW
0.55
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
µA
µA
pF
0.7
3
80
MIN
4
NE688M23
2SC5651
M23
TYP
5
1.9
4
145
0.1
0.1
0.8
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Forward Current Gain at V
CE
= 1 V, I
C
= 3 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE688M23
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
9
6
2
100
TBD
150
-65 to +150
100
120
V
CE
= 2 V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current, I
C
(mA)
80
60
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
40
20
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
0
0
0.2
0.4
0.6
0.8
1
Base to Emitter Voltage, V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
IB 50
µA
step
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
V
CE
= 2 V
Collector Current, I
C
(mA)
80
450
µA
350
µA
60
DC Current Gain, h
FE
100
40
250
µA
20
150
µA
IB = 50
µA
0
0
2
4
6
8
10
0.01
0.1
1
10
100
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
8
10
NOISE FIGURE/ASSOCIATED GAIN vs.
COLLECTOR CURRENT
10
V
CE
= 3 V
f = 1 GHz
8
Gain Bandwidth Product, f
T
(GHz)
7
6
5
4
3
2
1
V
CE
= 3 V
f = 2 GHz
G
A
6
6
4
4
2
NF
2
0
1
10
100
0
1
10
100
0
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
•
Headquarters
•
4590 Patrick Henry Drive
•
Santa Clara, CA 95054-1817
•
(408) 988-3500
•
Telex 34-6393
•
FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)
•
Internet: http://WWW.CEL.COM
02/10/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Associated Gain, G
A
(dB)
8
Noise Figure, NF (dB)
Microcontroller MCU
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