30QWK2C48
TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
30QWK2C48
Switching Type Power Supply Application
Converter & Chopper Application
•
•
•
•
Repetitive peak reverse voltage: V
RRM
=
120 V
Peak Forward Voltage: V
FM
=
0.85 V (max)
Average output rectified current: I
O
=
30 A
Low switching loses and output noise.
Maximum Ratings
Characteristics
Repetitive peak reverse voltage
Average output rectified current
Peak one cycle surge forward current
(sine wave)
Junction temperature
Storage temperature range
Symbol
V
RRM
I
O
I
FSM
T
j
T
stg
Rating
120
30
250 (50 Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
Symbol
V
FM
I
RRM
C
j
R
th (j-c)
Test Condition
I
FM
=
15 A
V
RRM
=
Rated (120 V)
V
R
=
10 V, f
=
1.0 MHz
DC Total
Min
Typ.
227
Max
0.85
50
1.2
Unit
V
µA
pF
°C/W
Note: V
FM
, I
RRM
, C
j
: A value of one cell.
000707EAA1
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
•
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
•
The information contained herein is subject to change without notice.
2000-11-20
1/4
30QWK2C48
i
F
– v
F
100
One cell
32
28
24
20
16
12
8
P
F (AV)
– I
o
180°
120°
90°
60°
α =
30°
Rectangular
waveform
(one cell)
(A)
Instantaneous forward current iF
Tj
=
150°C
10
100°C
75°C
25°C
1
Average forward power dissipation
P
F (AV)
(W)
0°
α
360°
4
0
0
Conduction
angle
α
4
8
12
16
20
24
28
32
36
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous forward voltage
vF (V)
Average output rectified current
I
o
(A)
Tc max – I
o
160
140
120
100
80
60
40
0°
α
360°
20
0
0
Conduction
angle
α
4
8
12
16
20
24
28
32
36
α =
30°
Rectangular
waveform
(one cell)
320
280
240
200
Surge forward current (non-repetitive)
Ta
=
25°C
Single phase full
Sine wave
f
=
50 Hz
One cell
Average forward power dissipation
Tc max (°C)
Surge forward current
60°
90° 120°
180°
I
FSM
(A)
160
120
80
40
0
1
3
5
10
30
50
100
Average output rectified current
Io
(A)
Number of cycles
r
th (j-c)
– t
10
One cell
500
1000
C
j
– V
R
(typical)
f
=
1 MHz
(pF)
5
Ta
=
25°C
One cell
Transient thermal impedance
rth (j-c) (°C/W)
3
300
1
Junction capacitance Cj
0.01
0.1
1
10
100
100
0.5
0.3
50
30
0.1
0.001
1000
10
1
3
5
10
30
50
100
Time t (s)
Reverse voltage
V
R
(V)
2000-11-20
3/4
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