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LF357

Description
OP-AMP, 13000 uV OFFSET-MAX, 20 MHz BAND WIDTH, PDIP8
Categorysemiconductor    Analog mixed-signal IC   
File Size232KB,14 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

LF357 Overview

OP-AMP, 13000 uV OFFSET-MAX, 20 MHz BAND WIDTH, PDIP8

LF357 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum supply/operating voltage18 V
Maximum operating temperature70 Cel
Minimum operating temperature0.0 Cel
Rated supply voltage15 V
Maximum negative supply voltage-18 V
Rated negative supply voltage-15 V
Rated bandwidth20 kHz
Rated rotation rate50 V/us
Maximum input offset voltage13000 mV
Processing package description0.300 INCH, PLASTIC, DIP-8
stateACTIVE
CraftsmanshipBIPOLAR
packaging shapeRECTANGULAR
Package SizeIN-LINE
Terminal formTHROUGH-HOLE
Terminal spacing2.54 mm
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelCOMMERCIAL
Amplifier typeOP-AMP
Rated common mode rejection ratio100 dB
Maximum input bias current IIB2.00E-4 uA
®
LF155-LF255-LF355
LF156-LF256-LF356
LF157-LF257-LF357
WIDE BANDWIDTH
SINGLE J-FET OPERATIONAL AMPLIFIERS
.
.
.
.
.
.
.
.
.
.
.
HIGH INPUT IMPEDANCE J-FET INPUT
STAGE
HIGH SPEED J-FET OP-AMPs : up to 20MHz,
50V/µs
OFFSET VOLTAGE ADJUSTMENT DOES NOT
DEGRADE DRIFT OR COMMON-MODE
REJECTION AS IN MOST OF MONOLITHIC
AMPLIFIERS
INTERNAL COMPENSATION AND LARGE
DIFFERENTIAL INPUT VOLTAGECAPABILITY
(UP TO V
CC+
)
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
TYPICAL APPLICATIONS
PRECISION HIGH SPEED INTEGRATORS
FAST D/A AND CONVERTERS
HIGH IMPEDANCE BUFFERS
WIDEBAND, LOW NOISE, LOW DRIFT
AMPLIFIERS
LOGARITHIMIC AMPLIFIERS
PHOTOCELL AMPLIFIERS
SAMPLE AND HOLD CIRCUITS
ORDER CODES
Part Number
LF355, LF356, LF357
LF255, LF256, LF257
LF155, LF156, LF157
Example :
LF355N
Temperature
Range
0
o
C, +70
o
C
–40 C, +105 C
–55 C, +125 C
o
o
o
o
Package
N
D
PIN CONNECTIONS
(top view)
1
DESCRIPTION
These circuits are monolithic J-FET input operational
amplifiers incorporating well matched, high voltage
J-FET on the same chip with standard bipolar transis-
tors.
This amplifiers feature low input bias and offset cur-
rents, low input offset voltage and input offset voltage
drift,coupledwith offsetadjust which doesnot degrade
drift or common-mode rejection.
The devices are also designed for high slew rate, wide
bandwidth,extremelyfastsettlingtime, lowvoltageand
current noise and a low 1/f noise level.
July 1998
8
7
6
5
1
2
3
4
- Offset Null 1
- Inverting input
- Non-inverting input
- V
CC-
5
6
7
8
-
-
-
-
Offset Null 2
Output
+
V
CC
N.C.
2
3
4
1/14
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