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31DQ09

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.7A, 90V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size71KB,2 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric View All

31DQ09 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.7A, 90V V(RRM), Silicon

31DQ09 Parametric

Parameter NameAttribute value
package instructionO-XALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1.7 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage90 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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