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LD5000

Description
50 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size20KB,2 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric Compare View All

LD5000 Overview

50 A, 50 V, SILICON, RECTIFIER DIODE

LD5000 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current500 A
Number of components1
Maximum operating temperature175 °C
Maximum output current50 A
Maximum repetitive peak reverse voltage50 V
surface mountNO
Base Number Matches1
W TE
PO WE R SEM IC O ND U C TO RS
LD5000 – LD5006
50A 10mm LUCAS TYPE PRESS-FIT DIODE
Features
!
!
!
!
!
Diffused Junction
Low Leakage
Low Cost
High Surge Current Capability
Typical I
R
less than 20µA
C
Mechanical Data
!
!
!
Case: All Copper Case and Components
Hermetically Sealed
Terminals: Contact Areas Readily Solderable
Polarity: Cathode to Case(Reverse Units Are
Available Upon Request and Are Designated
By An “R” Suffix, i.e. LD5002R or LD5004R)
Polarity: Red Color Equals Standard,
Black Color Equals Reverse Polarity
Mounting Position: Any
D
B
10mm Lucas
Dim
Min
Max
A
10.13
10.18
B
8.89
9.4
C
1.27
1.35
D
29.84
All Dimensions in mm
!
!
A
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
A
= 150°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 100A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
@T
A
=25°C unless otherwise specified
LD5000 LD5001 LD5002 LD5003 LD5004 LD5005 LD5006
Unit
50
35
100
70
200
140
300
210
50
400
280
500
350
600
420
V
V
A
I
FSM
V
FM
I
RM
C
j
R
JC
T
J
, T
STG
500
1.10
20
500
300
1.0
-65 to +175
A
V
µA
pF
K/W
°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance Junction to Case
(Note 2)
Operating and Storage Temperature Range
*Glass passivated forms are available upon request
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance: Junction to case, single side cooled.
LD5000 – LD5006
1 of 2
© 2002 Won-Top Electronics

LD5000 Related Products

LD5000 LD5005 LD5006 LD5004 LD5003 LD5002 LD5001
Description 50 A, 50 V, SILICON, RECTIFIER DIODE 50 A, 500 V, SILICON, RECTIFIER DIODE 50 A, 600 V, SILICON, RECTIFIER DIODE 50 A, 400 V, SILICON, RECTIFIER DIODE 50 A, 300 V, SILICON, RECTIFIER DIODE 50 A, 200 V, SILICON, RECTIFIER DIODE 50 A, 100 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 500 A 500 A 500 A 500 A 500 A 500 A 500 A
Number of components 1 1 1 1 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Maximum repetitive peak reverse voltage 50 V 500 V 600 V 400 V 300 V 200 V 100 V
surface mount NO NO NO NO NO NO NO
Base Number Matches 1 1 - 1 1 1 -
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