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30PFB60

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size245KB,1 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric Compare View All

30PFB60 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon,

30PFB60 Parametric

Parameter NameAttribute value
package instructionO-XALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak forward current45 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
3A Avg.
■最大定格
Item
く り 返 し ピ ー ク 逆 電 圧
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
R.M.S. Forward Current
Surge Forward Current
動 ½ 接 合 温 度 範 囲
Operating Junction Temperature Range
Storage Temperature Range
600 Volts
Symbol
V
RRM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
45A
50Hz、正弦半波通電抵抗負荷
50Hz Half Sine Wave Resistive Load
FRED
Conditions
600
Ta=29℃
Tl=109℃
Tl=Lead Temperature
30PFB60
■OUTLINE DRAWING(mm)
Unit
V
1.2
3.0
A
A
A
A
Maximum Ratings
4.71
50Hz正弦半波,1サイクル,非くり返し
50Hz Half Sine Wave,1cycle, Non-repetitive
−40∼+150
−40∼+150
■電気的・熱的特性
Item
Peak Reverse Current
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance
Electrical/ Thermal Characteristics
Symbol
I
RM
V
FM
tr r
R
th(j-a)
R
th(j-l)
Conditions
T
j
=25℃, V
RM
=V
RRM
T
j
=25℃, I
FM
=3A
I
FM
=3A, −di/dt=50 A/μs, T
j
=25℃
接合部・周囲間
Junction to Ambient
接合部½リード間
Junction to Lead
■APPROX. NET WEIGHT:1.21g
Min.
Typ.
Max.
20
1.7
35
80
8
Unit
μA
V
ns
℃/W
℃/W
単½フイン無し
*単½フイン無し / Without Fin or P.C. Board
■定格・特性曲線
FIG.1
FIG.2
FIG.3
FIG.4
FIG.5
FIG.6
47

30PFB60 Related Products

30PFB60
Description Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon,
package instruction O-XALF-W2
Reach Compliance Code unknown
ECCN code EAR99
application GENERAL PURPOSE
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
JESD-30 code O-XALF-W2
Maximum non-repetitive peak forward current 45 A
Number of components 1
Phase 1
Number of terminals 2
Maximum operating temperature 150 °C
Minimum operating temperature -40 °C
Maximum output current 3 A
Package body material UNSPECIFIED
Package shape ROUND
Package form LONG FORM
Certification status Not Qualified
Maximum repetitive peak reverse voltage 600 V
surface mount NO
Terminal form WIRE
Terminal location AXIAL
Base Number Matches 1
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