MARCH 2009
AS6C6264A
8K X 8 BIT LOW POWER CMOS SRAM
F
EATURES
8192 x 8 bit static CMOS RAM
70 ns Access Times
Common data inputs and
outputs
Three-state outputs
Typ. operating supply current
o
70 ns: 10 mA
Standby current:
o
< 2
μA
at T
a
≤
70 °C
Data retention current at 2 V:
o
< 1
μA
at T
a
≤
70 °C
TTL/CMOS-compatible
Automatic reduction of power
dissipation in long Read or Write
cycles
Power supply voltage 5 V
Operating temperature ranges:
o
0 to 70
°C
o
-40 to 85
°C
ESD protection > 2000 V
(MIL STD 883C M3015.7)
Latch-up immunity > 100 mA
Packages: PDIP28 (600 mil)
SOP28 (330 mil)
D
ESCRIPTION
The AS6C6264A is a static RAM
manufactured using a CMOS
process technology with the
following operating modes:
- Read - Standby
- Write - Data Retention
The memory array is based on a 6-
transistor cell.
The circuit is activated by the rising
edge of E2 (at E1 = L), or the falling
edge of E1 (at E2 = H). The address
and control inputs open
simultaneously. According to the
information of W and G, the data
inputs, or outputs, are active. In a
Read cycle, the data outputs are
activated by the falling edge of G,
afterwards the data word read will
be available at the outputs DQ0 -
DQ7. After the address change, the
data outputs go High-Z until the new
read information is available. The
data outputs have no preferred
state. If the memory is driven by
CMOS levels in the active state, and
if there is no change of the address,
data input and control signals W or
G, the operating current (at IO = 0
mA) drops to the value of the
operating current in the Standby
mode. The Read cycle is finished by
the falling edge of E2 or W, or by
the rising edge of E1, respectively.
Data retention is guaranteed down
to 2 V. With the exception of E2, all
inputs consist of NOR gates, so that
no pull-up/pull-down resistors are
required. This gate circuit allows to
achieve low power standby
requirements by activation with TTL-
levels too.
If the circuit is inactivated by E2 = L,
the standby current
P
IN
C
ONFIGURATION
P
IN
D
ESCRIPTION
MARCH/2009
ALLIANCE MEMORY
PAGE 1 of 10
MARCH 2009
AS6C6264A
8K X 8 BIT LOW POWER CMOS SRAM
C
HARACTERISTICS
All voltages are referenced to VSS = 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of
≤
5 ns, measured between 10 % and 90 % of VI, as well as
input levels of VIL = 0 V and VIH = 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the tdis-times, in which cases transition is measured } 200 mV from steady-state voltage.
a. Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at condition above those indicated in the
operational sections of this specification is not implied.Exposure to absolute maximum rating conditions for
extended periods may affect reliability
b. Maximum voltage is 7 V
c. Not more than 1 output should be shorted at the same time. Duration of the short circuit should not exceed 30 s.
MARCH/2009
ALLIANCE MEMORY
PAGE 3 of 10
MCU
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