Medium power transistor(80V,
0.7A)
2SB1189 / 2SB1238
Features
1) High breakdown voltage, BV
CEO
=80V, and
high current, I
C
=0.7A.
2) Complements the 2SD1767 / 2SD1859.
Dimensions
(Unit : mm)
2SB1189
4.0
1.0
2.5
0.5
1.5
0.4
(1)
3.0
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
2SB1189
2SB1238
Tj
Tstg
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Limits
−80
−80
−5
−0.7
0.5
2
1
150
−55
to
+150
°C
°C
W
∗1
∗2
0.5
(3)
V
V
V
A
1.5
0.4
Unit
0.4
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
∗1
When mounted on a 40×40×0.7 mm ceramic board.
∗2
Printed circuit board 1.7 mm thick, collector plating 1cm
2
or larger.
2SB1238
6.8
2.5
Packaging
specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
2SB1189
MPT3
QR
2SB1238
ATV
QR
−
TV2
2500
0.65Max.
1.0
0.9
∗
Denotes
h
BD
∗
T100
1000
0.5
(1) (2) (3)
2.54 2.54
1.05
14.5
4.4
1.5
0.45
FE
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−80
−80
−5
−
−
−
120
−
−
Typ.
−
−
−
−
−
−0.2
−
100
14
Max.
−
−
−
−0.5
−0.5
−0.4
390
−
20
Unit
V
V
V
μA
μA
V
−
MHz
pF
I
C
=−50μA
I
C
=−2mA
I
E
=−50μA
V
CB
=−50V
V
EB
=−4V
I
C
/I
B
=−500mA/−50mA
V
CE
/I
C
=−3V/−0.1A
V
CE
=−10V,
I
E
=50mA,
f=100MHz
V
CB
=−10V,
I
E
=0A,
f=1MHz
Conditions
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○
2010 ROHM Co., Ltd. All rights reserved.
4.5
1.6
(2)
1/2
2010.07 - Rev.B
2SB1189 / 2SB1238
Electrical
characteristics curves
−1.0
COLLECTOR CURRENT : I
C
(A)
Data Sheet
Ta=25°C
−
5mA
−0.6
−5
−2
−1
−0.5
−0.2
−0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
−
4mA
DC CURRENT GAIN : h
FE
−0.8
−
7mA
−
6mA
COLLECTOR CURRENT : I
C
(mA)
−10mA
−9mA
−50
−
8mA
−20
−10
Ta
=
25°C
V
CE
= −6V
500
Ta
=
25°C
−0.4
−3m
A
−2mA
200
100
V
CE
= −5V
−0.2
I
B
=
0mA
−1mA
−3V
50
−1V
−1
−2
−5
−10 −20
−50 −100 −200 −500
0
0
−2
−4
−6
−8
−10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Ground emitter output characteristics
Fig.2 Ground emitter propagation characteristics
Fig.3 DC current gain vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Ta
=
25°C
−0.2
−0.1
I
C
/I
B
=20/1
−0.05
I
C
/I
B
=10/1
TRANSITION FREQUENCY : f
T
(MHz)
Ta
=
25°C
V
CE
=
−5V
500
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
100
Ta=25
°C
f=1MHz
I
E
=0A
200
100
50
Cob
20
10
50
−0.02
20
−0.01
−1
−5
−10 −20
−50 −100 −200 −500
2
5
10
20
50
−0.5
−1
−2
−5
−10
−20
EMITTER CURRENT : I
E
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO BASE VOLTAGE : V
CE
(V)
Fig.5 Gain bandwidth product vs. emitter current
Fig.4 Collector-emitter saturation voltage
vs.collector current
Fig.6 Collector output capacitance
vs. collector-base voltage
EMITTER INPUT CAPACITANCE : C
ib
(pF)
100
Cib
COLLECTOR CURRENT : I
C
(A)
Ta=25
°C
f=1MHz
I
C
=0A
−1.0
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−0.005
−0.002
Ta
=
25°C
∗Single
pulse
−0.001
−0.1 −0.2 −0.5 −1
DC
=
1
Pw
s
∗
0m
=
1
Pw
s
∗
m
00
50
20
10
−0.5
−1
−2
−5
−10
−20
−2
−5
−10 −20
−50 −100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
Fig.8 Safe operating area (2SB1189)
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○
2010 ROHM Co., Ltd. All rights reserved.
2/2
2010.07 - Rev.B
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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Please be sure to implement in your equipment using the Products safety measures to guard
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