2STR1160
Low voltage fast-switching NPN power transistor
Datasheet - production data
Features
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Miniature SOT-23 plastic package for
surface mounting circuits
Description
SOT-23
Figure 1: Internal schematic diagram
The device in a NPN transistor manufactured
using new “PB-HCD” (Power Bipolar High
Current Density) technology. The resulting
transistor shows exceptional high gain
performances coupled with very low saturation
voltage.
The complementary PNP is the 2STR2160.
Applications
LED
Battery charger
Motor and relay driver
Voltage regulation
Table 1: Device summary
Order code
2STR1160
Marking
1160
Package
SOT-23
Packing
Tape and reel
April 2015
DocID14430 Rev 3
1/9
www.st.com
This is information on a product in full production.
Electrical ratings
2STR1160
1
Electrical ratings
Table 2: Absolute maximum rating
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
Tstg
TJ
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Total dissipation at T
amb
= 25°C
Storage temperature
Max. operating junction temperature
Table 3: Thermal data
Value
60
60
5
1
2
0.5
-65 to 150
150
Unit
V
V
V
A
A
W
°C
°C
Symbol
R
thj-amb
(1)
Notes:
(1)
Device
Parameter
Thermal resistance junction-amb max
Value
250
Unit
°C/
W
mounted on PCB area of 1 cm
2
2/9
DocID14430 Rev 3
2STR1160
Electrical characteristics
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4: Electrical characteristics
Symbol
I
CBO
I
EBO
Parameter
Collector cut-off current
(I
E
=0)
Emitter cut-off current
(I
C
=0)
Collector-base
breakdown voltage
(I
E
= 0)
Collector-emitter
breakdown voltage
(I
B
= 0)
Emitter-base
breakdown voltage (I
C
=
0)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Test conditions
V
CB
= 60 V
V
EB
= 5 V
Min.
Typ.
Max.
0.1
0.1
Unit
μA
μA
V
(BR)CBO
I
C
= 100 μA
60
V
V
(BR)CEO
(1)
I
C
= 10 mA
60
V
V
(BR)EBO
I
E
= 100 μA
I
C
= 0.5 A I
B
= 50 mA
I
C
= 1 A I
B
= 100 mA
I
C
= 1 A I
B
= 100 mA
I
C
= 0.5 A V
CE
= 2V
5
130
210
0.9
180
85
250
130
30
210
430
1.25
560
V
mV
mV
V
V
CE(sat)
V
BE(sat)
h
FE
DC current gain
I
C
= 1 A V
CE
= 2V
I
C
= 2 A V
CE
= 2V
Resistive load
t
on
t
off
Notes:
(1)
Pulse
Turn-on time
Turn-off time
I
C
= 1.5 A V
CC
= 10 V
I
B1
= -I
B2
= 150 mA
V
BB(off)
= -5 V
220
500
ns
ns
test: pulse duration = 300 μs, duty cycle ≤ 1.5 %%
DocID14430 Rev 3
3/9
Electrical characteristics
2STR1160
2.1
Typical characteristic (curves)
Figure 2: DC current gain (@ VCE=1 V)
Figure 3: DC current gain (@ VCE=2 V)
Figure 4: Base-emitter on voltage
Figure 5: Base-emitter saturation voltage
Figure 6: Collector-emitter saturation
voltage
Figure 7: Capacitance curves
4/9
DocID14430 Rev 3
2STR1160
Figure 8: Resistive load switching time
Electrical characteristics
Figure 9: Resistive load switching time
DocID14430 Rev 3
5/9
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