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8403609LA

Description
SRAM 2Kx8 Async 5.0V Low Power SRAM
Categorystorage   
File Size90KB,11 Pages
ManufacturerIDT (Integrated Device Technology, Inc.)
Websitehttp://www.idt.com/
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8403609LA Overview

SRAM 2Kx8 Async 5.0V Low Power SRAM

8403609LA Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerIDT (Integrated Device Technology, Inc.)
Product CategorySRAM
Shipping RestrictionsThis product may require additional documentation to export from the United States.
RoHSN
Memory Size16 kbit
Organization2 k x 8
Access Time45 ns
Interface TypeParallel
Supply Voltage - Max5.5 V
Supply Voltage - Min4.5 V
Supply Current - Max95 mA
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 125 C
Mounting StyleThrough Hole
Package / CaseCDIP-24
PackagingTube
Height3.56 mm
Length32.51 mm
Memory TypeSDR
Operating Temperature Range- 55 C to + 125 C
TypeAsynchronous
Width7.62 mm
Number of Ports1
Factory Pack Quantity15
CMOS Static RAM
16K (2K x 8-Bit)
Features
Description
IDT6116SA
IDT6116LA
High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25ns (max.)
– Commercial: 15/20/25ns (max.)
Low-power consumption
Battery backup operation
– 2V data retention voltage (LA version only)
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle soft-error
rates
Input and output directly TTL-compatible
Static operation: no clocks or refresh required
Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin
Dip and 24-pin SOIC
Military product compliant to MIL-STD-833, Class B
The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized
as 2K x 8. It is fabricated using high-performance, high-reliability CMOS
technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When
CS
goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long as
CS
remains HIGH. This capability provides significant system level power and
cooling savings. The low-power (LA) version also offers a battery backup
data retention capability where the circuit typically consumes only 1µW to
4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing for
operation.
The IDT6116SA/LA is packaged in 24-pin 300mil plastic DIP, 24-pin
600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing high
board-level packing densities.
Military grade product is manufactured in compliance to MIL-STD-883,
Class B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
Functional Block Diagram
A
0
V
CC
ADDRESS
DECODER
A
10
128 X 128
MEMORY
ARRAY
GND
I/O
0
INPUT
DATA
CIRCUIT
I/O
7
I/O CONTROL
,
CS
OE
WE
CONTROL
CIRCUIT
3089 drw 01
FEBRUARY 2013
1
©2013 Integrated Device Technology, Inc.
DSC-3089/08
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