2N6400 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features
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•
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Blocking Voltage to 800 V
•
These are Pb−Free Devices
MAXIMUM RATINGS*
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
*40
to 125°C, Sine Wave 50 to 60
Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
On-State Current RMS (180° Conduction
Angles; T
C
= 100°C)
Average On-State Current (180° Conduc-
tion Angles; T
C
= 100°C)
Peak Non-repetitive Surge Current (1/2
Cycle, Sine Wave 60 Hz, T
J
= 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power (Pulse Width
≤
1.0
ms,
T
C
= 100°C)
Forward Average Gate Power (t = 8.3 ms,
T
C
= 100°C)
Forward Peak Gate Current (Pulse Width
≤
1.0
ms,
T
C
= 100°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
Value
Unit
V
50
100
200
400
600
800
16
10
160
145
20
0.5
2.0
−40
to
+125
−40
to
+150
A
A
A
A
2
s
W
W
A
°C
°C
1
2
3
4
1
2
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 3
2N640xG
AYWW
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
3
x
A
Y
WW
G
= 0, 1, 2, 3, 4 or 5
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
November, 2012
−
Rev. 6
1
Publication Order Number:
2N6400/D
2N6400 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
Symbol
R
qJC
T
L
Max
1.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
−
−
−
−
−
−
−
0.2
−
−
t
gt
t
q
−
−
−
−
−
−
−
9.0
−
0.7
−
−
18
−
1.0
15
35
50
10
2.0
1.7
30
60
1.5
2.5
−
40
60
−
−
−
−
ms
ms
V
mA
mA
mA
V
mA
V
ON CHARACTERISTICS
*Peak Forward On−State Voltage (I
TM
= 32 A Peak, Pulse Width
≤
1 ms, Duty Cycle
≤
2%)
* Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100
W)
* Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100
W)
T
C
= 25°C
T
C
=
−40°C
T
C
= 25°C
T
C
=
−40°C
V
TM
I
GT
V
GT
Gate Non−Trigger Voltage (V
D
= 12 Vdc, R
L
= 100
W),
T
C
= +125°C
* Holding Current
T
C
= 25°C
(V
D
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
*T
C
=
−40°C
Turn-On Time (I
TM
= 16 A, I
GT
= 40 mAdc, V
D
= Rated V
DRM
)
Turn-Off Time (I
TM
= 16 A, I
R
= 16 A, V
D
= Rated V
DRM
)
T
C
= 25°C
T
J
= +125°C
V
GD
I
H
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off-State Voltage (V
D
= Rated V
DRM
, Exponential Waveform)
T
J
= +125°C
*Indicates JEDEC Registered Data.
dv/dt
V/ms
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2
2N6400 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
−
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
128
TC, MAXIMUM CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE POWER (WATTS)
124
α
120
116
112
dc
108
104
100
0
5.0 6.0 7.0
1.0 2.0
3.0 4.0
8.0 9.0
I
T(AV)
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
10
α
= 30°
180°
60°
90°
120°
α
= CONDUCTION ANGLE
16
14
12
60°
10
8.0
6.0
4.0
2.0
0
0
α
= 30°
T
J
≈
125°C
120°
180°
90°
dc
α
α
= CONDUCTION ANGLE
5.0 6.0
1.0
2.0
3.0 4.0
7.0
8.0 9.0
I
T(AV)
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
10
Figure 1. Average Current Derating
Figure 2. Maximum On−State Power Dissipation
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3
2N6400 Series
200
100
70
iTM , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMPS)
50
30
20
T
J
= 25°C
10
7.0
5.0
3.0
2.0
160
I TSM , PEAK SURGE CURRENT (AMP)
1 CYCLE
125°C
150
1.0
0.7
0.5
0.3
0.2
0.4
0.8 1.2
1.6
2.0
2.4 2.8
4.0
3.2
3.6
v
TM
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
4.4
140
130
T
J
= 125°C
f = 60 Hz
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
1.0
2.0
3.0
4.0
6.0
8.0
10
120
110
NUMBER OF CYCLES
Figure 3. On−State Characteristics
Figure 4. Maximum Non−Repetitive Surge Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
t, TIME (ms)
100
200 300
500
1.0 k
2.0 k 3.0 k 5.0 k
10 k
Z
qJC(t)
= R
qJC
•
r(t)
Figure 5. Thermal Response
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4
2N6400 Series
TYPICAL CHARACTERISTICS
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2
0.5
1.0
2.0
5.0 10
20
PULSE WIDTH (ms)
50
100
200
100
I GT, GATE TRIGGER CURRENT (mA)
OFF‐STATE VOLTAGE = 12 V
R
L
= 50
W
T
J
= -40°C
i GT, PEAK GATE CURRENT (mA)
10
25°C
125°C
1
-40 -25
-10
5
20
35
50 65
80
T
J
, JUNCTION TEMPERATURE (°C)
95
110 125
Figure 6. Typical Gate Trigger Current
versus Pulse Width
Figure 7. Typical Gate Trigger Current
versus Junction Temperature
1.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10
5
20
35
50
65
80
95
110
125
100
IH , HOLDING CURRENT (mA)
10
1
-40 -25 -10
5
20
35
50
65
80
95
110 125
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 9. Typical Holding Current
versus Junction Temperature
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