Bipolar Transistors - BJT Silicon Unijuction
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Parts packaging code | BCY |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | not_compliant |
| Configuration | SINGLE |
| Maximum emitter current | 50 mA |
| Maximum base-to-base voltage | 35 V |
| maximum eigendeviation ratio | 0.75 |
| minimum intrinsic deviation ratio | 0.56 |
| JEDEC-95 code | TO-18 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Maximum peak current | 5 mA |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| Maximum static resistance between bases | 9.1 kΩ |
| Minimum static resistance between bases | 4.7 kΩ |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Minimum valley point current | 4 mA |
| Base Number Matches | 1 |
| 2N2646 | 2N2894 | |
|---|---|---|
| Description | Bipolar Transistors - BJT Silicon Unijuction | Bipolar Transistors - BJT PNP Fast Sw SS |
| Is it lead-free? | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible |
| Reach Compliance Code | not_compliant | compliant |
| Configuration | SINGLE | SINGLE |
| JEDEC-95 code | TO-18 | TO-18 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 150 °C | 175 °C |
| Package body material | METAL | METAL |
| Package shape | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Maximum power dissipation(Abs) | 0.3 W | 1.2 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON |