LC33832ML-10 datasheet, PDF - EEWORLD Datasheet

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LC33832ML-10: Description256 K (32768 words X 8 bits) Pseudo-SRAM; Categorystorage storage; File Size113KB，9 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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LC33832ML-10 Overview

256 K (32768 words X 8 bits) Pseudo-SRAM

LC33832ML-10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SANYO
Parts packaging code	SOIC
package instruction	SOP, SOP28,.5
Contacts	28
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G28
JESD-609 code	e0
length	16.4 mm
memory density	2097152 bi
Memory IC Type	PSEUDO STATIC RAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP28,.5
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	3 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8.4 mm

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Ordering number : EN4430C

CMOS LSI

LC33832P, S, M, PL, SL, ML-70/80/10

256 K (32768 words

8 bits) Pseudo-SRAM

Overview

The LC33832 series is composed of pseudo static RAM

that operates on a single 5 V power supply and is

organized as 32768 words

8 bits. By using memory

cells each composed of a single transistor and capacitor,

together with peripheral CMOS circuitry, this series

achieves ease of use with high density, high speed, and

low power dissipation. The LC33832 series can easily

accomplish auto-refresh and self-refresh by means of

OE/RFSH input. As with asynchronous static RAM, WE

input uses a system for incorporating input data at the WE

rise, thereby facilitating interfacing with a microcomputer.

The LC33832 series features pin compatibility with 256 K

static RAM (the LC36256A series), and available

packages are the standard 28-pin DIP with widths of 600

mil or 300 mil, and the SOP with a width of 450 mil.

CE-only refresh can be accomplished by selecting address

256 (A0 to A7) within 4 ms.

Package Dimensions

unit: mm

3012A-DIP28

[LC33832P, PL]

SANYO: DIP28

Features

•

32768 words

8 bits configuration

Single 5 V ±10% power supply

All input and output (I/O) TTL compatible

Fast access times and low power dissipation

4 ms refresh using 256 refresh cycle

CE-only refresh, auto-refresh, and self-refresh

Low-power version: 100 µA self-refresh current

Package

DIP28-pin (600 mil) plastic package: LC33832P, PL

DIP28-pin (300 mil) plastic package: LC33832S, SL

SOP28-pin (450 mil) plastic package: LC33832M, ML

unit: mm

3133-DIP28

[LC33832S, SL]

SANYO: DIP28

• CE access time/OE access time/Cycle time/Current drain

Parameter

CE access time

OE access time

Cycle time

Current drain

Operating

Standby

LC33832P, S, M, PL, SL, ML

-70

70 ns

30 ns

115 ns

65 mA

-80

80 ns

35 ns

130 ns

60 mA

1 mA/100 µA (L version)

-10

100 ns

40 ns

160 ns

50 mA

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22897HA (OT)/52595TH (OT)/N1993JN/40893JN A8-9957, 58, 59, No. 4430-1/9

LC33832ML-10 Related Products

	LC33832ML-10	LC33832SL	LC33832S	LC33832PL	LC33832ML-80	LC33832ML-70	LC33832P	LC33832M
Description	256 K (32768 words X 8 bits) Pseudo-SRAM	256 K (32768 words X 8 bits) Pseudo-SRAM	256 K (32768 words X 8 bits) Pseudo-SRAM	256 K (32768 words X 8 bits) Pseudo-SRAM	256 K (32768 words X 8 bits) Pseudo-SRAM	256 K (32768 words X 8 bits) Pseudo-SRAM	256 K (32768 words X 8 bits) Pseudo-SRAM	256 K (32768 words X 8 bits) Pseudo-SRAM

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