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1N5924P

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size796KB,3 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Download Datasheet Parametric View All

1N5924P Overview

Zener Diode,

1N5924P Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Diode typeZENER DIODE
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
ZENER DIODES
1N5913B - - - 1N5956B
POWER DISSIPATION: 1.5W
Silicon planar power zener diodes
No suffix indicates a
±
20% tolerance on nominal Vz.
Suffix "A" denotes a
±10%,Suffix
"B" denotes a
±
5%,
Suffix "C" denotes a
±
2%,Suffix "D" denotes a
±
1%.
DO- 41
MECHANICAL DATA
Case:DO-41
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight:0.012ounces,0.34
grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SYMBOL
Zener current (see Table "Characteristics")
VALUE
UNIT
Pow er dissipation at T
amb
=25
P
tot
T
J
T
STG
1.5
1)
150
-55---+150
W
Junction temperature
Storage temperature
range
SYMBOL
Thermal resistance junction to
lead
MIN
TYP
MAX
45
1)
1.2
UNIT
/W
R
θ
JL
V
F
Forw ard voltage at I
F
=200mA
V
www.galaxycn.com
NOTES:
(1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
Document Number 0284024
BL
GALAXY ELECTRICAL
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