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LBC848C

Description
TRANSISTOR,BJT,NPN,65V V(BR)CEO,100MA I(C),SOT-23
Categorysemiconductor    Discrete semiconductor   
File Size130KB,6 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric View All

LBC848C Overview

TRANSISTOR,BJT,NPN,65V V(BR)CEO,100MA I(C),SOT-23

LBC848C Parametric

Parameter NameAttribute value
stateCONSULT MFR
Transistor typeGENERAL PURPOSE SMALL SIGNAL
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating
– Machine Model: >400 V
Pb-Free Packages are Available
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Emitter–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector Current – Continuous
IC
VEBO
6.0
6.0
5.0
100
mAdc
VCBO
80
50
30
Vdc
2
EMIT T ER
1
LBC846ALT1
Series
3
Symbol
VCEO
Value
65
45
30
Unit
Vdc
2
SOT–23
Vdc
3
COLLECT OR
1
B ASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 1.)
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2.)
Junction and Storage
Temperature Range
Symbol
PD
Max
225
Unit
mW
MARKING DIAGRAM
3
xx
1.8
R
qJA
PD
556
300
mW/°C
°C/W
mW
xx= Device Marking
(See Table Below)
2.4
R
qJA
TJ, Tstg
417
–55 to
+150
mW/°C
°C/W
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
LBC846ALT1S-1/6

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