5962-9461114HTA datasheet, PDF

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5962-9461114HTA: DescriptionSRAM Module, 512KX32, 25ns, CMOS, CPGA66, PGA-66; Categorystorage storage; File Size224KB，12 Pages; ManufacturerWhite Electronic Designs Corporation; Websitehttp://www.wedc.com/

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5962-9461114HTA Overview

SRAM Module, 512KX32, 25ns, CMOS, CPGA66, PGA-66

5962-9461114HTA Parametric

Parameter Name	Attribute value
package instruction	PGA-66
Reach Compliance Code	unknown
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	S-CPGA-P66
JESD-609 code	e0
length	27.305 mm
memory density	16777216 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of functions	1
Number of terminals	66
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX32
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	PGA
Encapsulate equivalent code	PGA66,11X11
Package shape	SQUARE
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum seat height	4.5974 mm
Maximum standby current	0.19 A
Minimum standby current	4.5 V
Maximum slew rate	0.6 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal pitch	2.54 mm
Terminal location	PERPENDICULAR
width	27.305 mm
Base Number Matches	1

5962-9461114HTA Preview

Austin Semiconductor, Inc.

512K x 32 SRAM

SRAM MEMORY ARRAY

AVAILABLE AS MILITARY

SPECIFICATIONS

•

AS8S512K32

& AS8S512K32A

PIN ASSIGNMENT

(Top View)

68 Lead CQFP (Q)

Military SMD Pinout Option

SRAM

SMD 5962-94611 (Military Pinout)

MIL-STD-883

Operation with single 5V supply

High speed: 17, 20, 25 and 35ns

Built in decoupling caps for low noise

Organized as 512Kx32 , byte selectable

Low power CMOS

TTL Compatible Inputs and Outputs

Future offerings

3.3V Power Supply

15 ns Ultra High Speed

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

GND

I/O 8

I/O 9

I/O 10

I/O 11

I/O 12

I/O 13

I/O 14

I/O 15

FEATURES

OPTIONS

MARKINGS

•

Timing

17ns

20ns

25ns

35ns

45ns

55ns

• Package

Ceramic Quad Flatpack

Pin Grid Array

• Low Power Data Retention Mode

• Pinout

Military

Commercial

-17

-20

-25

-35

-45

-55

No.702

No.904

(no indicator)

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. AS8S512K32 and

AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as

512Kx32 bits. These devices achieve high speed access, low power

consumption and high reliability by employing advanced CMOS

memory technology.

This military temperature grade product is ideally suited for

military and space applications.

For more products and information

please visit our web site at

www.austinsemiconductor.com

AS8S512K32 & AS8S512K32A

Rev. 3.0 6/00

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

I/O 31

Vcc

A13

A12

A11

A10

I/O 0

I/O17

I/O18

I/O19

Vss

I/O20

I/O21

I/O22

I/O23

Vcc

I/O24

I/O25

I/O26

I/O27

Vss

I/O28

I/O29

I/O30

I/O 16

A18

A17

CS4\

CS3\

CS2\

CS1\

Vcc

OE\

WE\

A16

A15

A14

I/O 15

•

Operating Temperature Ranges

Military (-55

C to +125

Industrial (-40

C to +85

68 Lead CQFP

Commercial Pinout Option (A)

Vcc

A11

A12

A13

A14

A15

A16

CS1\

OE\

CS2

A17

WE2\

WE3\

WE4\

A18

I/O 14

I/O 13

I/O 12

Vss

I/O 11

I/O 10

I/O 9

I/O 8

Vcc

I/O 7

I/O 6

I/O 5

I/O 4

Vss

I/O 3

I/O 2

I/O 1

CS3\

GND

CS4\

WE1\

A10

Vcc

I/O 16

I/O 17

I/O 18

I/O 19

I/O 20

I/O 21

I/O 22

I/O 23

GND

I/O 24

I/O 25

I/O 26

I/O 27

I/O 28

I/O 29

I/O 30

I/O 31

66 Lead PGA (P)

Military SMD Pinout

Austin Semiconductor, Inc.

AS8S512K32

& AS8S512K32A

SRAM

CS\4

CS\3

512K x 8

CS\2

I/O 24 - I/O 31

I/O 16 - I/O 23

512K x 8

CS\1

WE\

OE\

A0 - A18

I/O 8 - I/O 15

512K x 8

I/O 0 - I/O 7

MILITARY PINOUT/BLOCK DIAGRAM

COMMERCIAL PINOUT/BLOCK DIAGRAM

TRUTH TABLE

MODE

Read

Write(2)

Standby

OE\

CE\

WE\

I/O

OUT

High Z

POWER

ACTIVE

STANDBY

AS8S512K32 & AS8S512K32A

Rev. 3.0 6/00

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS*

Voltage of Vcc Supply Relative to Vss......................-.5V to +7V

Storage Temperature............................................-65°C to +150°C

Short Circuit Output Current(per I/O).................................20mA

Voltage on Any Pin Relative to Vss....................-.5V to Vcc+1V

Maximum Junction Temperature**...................................+150°C

*Stresses greater than those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device.

AS8S512K32

& AS8S512K32A

SRAM

This is a stress rating only and functional operation on the

device at these or any other conditions above those indicated

in the operational sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

**Junction temperature depends upon package type, cycle time,

loading, ambient temperature and airflow. See the Application

Information section at the end of this datasheet for more infor-

mation.

ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS

(-55

C < T

< 125

C and -40

C to +85

C; Vcc = 5V +10%)

DESCRIPTION

Input High (logic 1) Voltage

Input Low (logic 1) Voltage

Input Leakage Current

ADD,OE

Input Leakage Current

WE, CE

Output Leakage Current

I/O

Output High Voltage

Output Low Voltage

Supply Voltage

CONDITIONS

SYMBOL

0V<V

Output(s) Disabled

0V<V

OUT

= 4.0mA

= 8.0mA

LI1

LI2

ILO

4.5

MIN

2.2

-0.5

-10

2.4

0.4

5.5

MAX UNITS NOTES

+.5

0.8

µA

1,2

DESCRIPTION

CONDITIONS

SYMBOL

Icc

-17

700

-20

650

MAX

-25 -35

600

570

-45

570

-55 UNITS NOTES

550

3,13

CS\<VIL; VCC = MAX

Power Supply

f = MAX = 1/ tRC (MIN)

Current: Operating

Outputs Open

CS\>VIH; VCC = MAX

Power Supply

f = MAX = 1/ tRC (MIN)

Current: Standby

Outputs Open

SBT1

240

190

150

3, 13

CMOS Standby

VIN = VCC - 0.2V, or

VSS +0.2V

VCC=Max; f = 0Hz

SBT2

AS8S512K32 & AS8S512K32A

Rev. 3.0 6/00

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

CAPACITANCE

= 0V, f = 1MHz, T

= 25

SYMBOL

ADD

WE,

("A" version)

PARAMETER

A0 - A18 Capacitance

OE\ Capacitance

WE\ and CS\ Capacitance

I/O 0- I/O 31 Capacitance

WE\ Capacitance

MAX

AS8S512K32

& AS8S512K32A

SRAM

UNITS

NOTE:

1. This parameter is sampled.

AC TEST CONDITIONS

Test Specifications

Input pulse levels.........................................V

to 3V

Input rise and fall times.........................................5ns

Input timing reference levels...............................1.5V

Output reference levels........................................1.5V

Output load..............................................See Figure 1

Current Source

Device

Under

Test

Vz = 1.5V

(Bipolar

Supply)

Ceff = 50pf

Current Source

NOTES:

Vz is programmable from -2V to + 7V.

and I

programmable from 0 to 16 mA.

Vz is typically the midpoint of V

and V

and I

are adjusted to simulate a typical resistive load

circuit.

Figure 1

AS8S512K32 & AS8S512K32A

Rev. 3.0 6/00

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

AS8S512K32

& AS8S512K32A

SRAM

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS

(NOTE 5) (-55

C<T

< 125

C and -40

C to +85

C; V

= 5V +10%)

DESCRIPTION

READ CYCLE

READ cycle time

Address access time

Chip select access time

Output hold from address change

Chip select to output in Low-Z

Chip select to output in High-Z

Output enable access time

Output enable to output in Low-Z

Output disable to output in High-Z

WRITE CYCLE

WRITE cycle time

Chip select to end of write

Address valid to end of write

Address setup time

Address hold from end of write

WRITE pulse width

Data setup time

Data hold time

Write disable to output in Low-z

Write enable to output in High-Z

SYMBOL

ACS

LZCS

HZCS

AOE

LZOE

HZOE

MIN

-17

MAX

-20

MIN MAX

-25

MIN MAX

-35

MIN MAX

-45

MIN

-55

MAX

MIN

MAX

UNITS NOTES

4,6,7

4,6

WP1

WP2

LZWE

HZWE

4,6,7

AS8S512K32 & AS8S512K32A

Rev. 3.0 6/00

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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