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60MT120KB

Description
3 PHASE, 60 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size97KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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60MT120KB Overview

3 PHASE, 60 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE

60MT120KB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionR-PUFM-X6
Contacts6
Reach Compliance Codecompli
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 6 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.75 V
JESD-30 codeR-PUFM-X6
JESD-609 codee0
Maximum non-repetitive peak forward current440 A
Number of components6
Phase3
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current60 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin I27500 rev. A 05/03
MT..KB SERIES
THREE PHASE BRIDGE
Power Modules
Features
Package fully compatible with the industry standard INT-A-
pak power modules series
High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio, outline for easy connections to
power transistor and IGBT modules
4000 V
RMS
isolating voltage
UL E78996 approved
60 A
70 A
Description
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and heavy
duty applications.
Major Ratings and Characteristics
Parameters
I
O
@ T
C
I
FSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
T
STG
T
J
range
range
range
60MT.KB
60 (75)
85 (61)
420
440
870
790
8700
70MT.KB
70 (90)
85 (57)
480
500
1150
1050
11500
Units
A
°C
A
A
A
2
s
A
2
s
A
2
√s
V
°C
°C
800 to 1600
- 40 to 150
- 40 to 150
www.irf.com
1

60MT120KB Related Products

60MT120KB 70MT120KB
Description 3 PHASE, 60 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 70 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction R-PUFM-X6 R-PUFM-X6
Contacts 6 6
Reach Compliance Code compli compli
Other features UL RECOGNIZED UL RECOGNIZED
Shell connection ISOLATED ISOLATED
Configuration BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS
Diode component materials SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.75 V 1.55 V
JESD-30 code R-PUFM-X6 R-PUFM-X6
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 440 A 500 A
Number of components 6 6
Phase 3 3
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 60 A 70 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1200 V 1200 V
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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