CHIPLED
LY R976, LO R976, LS R976
Besondere Merkmale
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Gehäusebauform: 0805
Industriestandard bzgl. Lötpadraster
geringe Bauteilhöhe
für IR-Lötung geeignet
für Hinterleuchtungen und als opt. Indikator einsetzbar
gegurtet (8-mm-Filmgurt)
VEO06987
Features
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0805 package
Industry standard footprint
low profile
suitable for IR reflow soldering process
for use as optical indicator and backlighting
available taped on reel (8 mm tape)
Typ
Emissions-
farbe
Color of
Emission
yellow
orange
super-red
Type
Farbe der
Lichtaustritts-
fläche
Color of the
Light Emitting
Area
colorless clear
Lichtstärke
Luminous
Intensity
I
F
= 20 mA
I
V
(mcd)
Lichtstrom
Luminous
Flux
I
F
= 20 mA
Φ
V
(mlm)
Bestellnummer
Ordering Code
LY R976-MO
LO R976-NO
LS R976-NO
≥
16 (30 typ.) 250 (typ.)
≥
25 (55 typ.) 450 (typ.)
≥
25 (55 (typ.) 450 (typ.)
Q62702-P5105
Q62702-P5101
Q62702-P5103
Semiconductor Group
1
1998-09-15
LY R976, LO R976
LS R976
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebstemperatur
Operating temperature range
Lagertemperatur
Storage temperature range
Sperrschichttemperatur
Junction temperature
Durchlaßstrom
Forward current
Stoßstrom
Surge current
t
≤
10
µs,
D
= 0.005
Sperrspanung
Reverse voltage
Verlustleistung,
T
A
= 25 ˚C
Power dissipation,
T
A
= 25 ˚C
Wärmewiderstand
Sperrschicht / Umgebung
Thermal resistance
Junction / air
Symbol
Symbol
Werte
Values
– 30 ... + 85
– 40 ... + 85
+ 95
25
0.1
Einheit
Unit
˚C
˚C
˚C
mA
A
T
op
T
stg
T
j
I
F
I
FM
V
R
P
tot
R
th JA
3
70
700
V
mW
K/W
Semiconductor Group
2
1998-09-15
LY R976, LO R976
LS R976
Kennwerte
(
T
A
= 25 ˚C)
Characteristics
Bezeichnung
Parameter
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
I
F
= 20 mA
Dominantwellenlänge
Dominant wavelength
I
F
= 20 mA
Spektrale Bandbreite bei 50 %
I
rel max
Spectral bandwidth at 50 %
I
rel max
I
F
= 20 mA
Abstrahlwinkel bei 50 %
I
v
(Vollwinkel)
Viewing angle at 50 %
I
v
Durchlaßspannung
Forward voltage
I
F
= 20 mA
I
F
= 20 mA
Sperrstrom
Reverse current
V
R
= 3 V
Temperaturkoeffizient von
λ
peak
Temperature coefficient of
λ
peak
I
F
= 20 mA
Temperaturkoeffizient von
λ
dom
,
Temperature coefficient of
λ
dom
,
I
F
= 20 mA
Temperaturkoeffizient von
V
F
,
Temperature coefficient of
V
F
,
I
F
= 20 mA
Symbol
Symbol
LY
Werte
Values
LO
LS
Einheit
Unit
(typ.)
λ
peak
591
610
645
nm
(typ.)
λ
dom
587
605
632
nm
(typ.)
∆
λ
2ϕ
15
160
16
160
16
160
nm
Grad
deg.
(typ.)
(max.)
(typ.)
(max.)
V
F
V
F
I
R
I
R
2.0
2.6
0.01
10
2.0
2.6
0.01
10
2.0
2.6
0.01
10
V
V
µA
µA
(typ.)
TC
λ
peak
0.13
0.13
0.14
nm/K
(typ.)
TC
λ
dom
0.10
0.07
0.01
nm/K
(typ.)
TC
V
F
– 2.5
– 1.7
– 2.0
mV/K
Semiconductor Group
3
1998-09-15
LY R976, LO R976
LS R976
Relative spektrale Emission
I
rel
=
f
(λ),
T
A
= 25 ˚C,
I
F
= 20 mA
Relative spectral emission
V(λ) = spektrale Augenempfindlichkeit
Standard eye response curve
100
Ι
rel
%
80
OHL00415
V
λ
60
40
yellow
orange
super-red
20
0
350
400
450
500
550
600
650
nm 700
λ
Abstrahlcharakteristik
I
rel
=
f
(ϕ)
Radiation characteristic
40˚
30˚
20˚
10˚
0˚
OHL00408
ϕ
1.0
50˚
0.8
0.6
60˚
0.4
70˚
0.2
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
0
Semiconductor Group
4
1998-09-15
LY R976, LO R976
LS R976
Durchlaßstrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 ˚C
10
2
mA
Ι
F
5
OHL00232
Relative Lichtstärke
I
V
/
I
V(20 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 ˚C
Ι
V
10
1
OHL00417
Ι
V (20 mA)
10
0
10
1
5
5
10
-1
5
10
5
0
10
-2
5
super-red
yellow
orange
10
-1
1.0
1.4
1.8
2.2
2.6
3.0 V 3.4
V
F
10
-3 -1
10
5 10
0
5 10
1
Ι
F
mA 10
2
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
I
F
=
f
(
T
A
)
30
mA
25
OHL00420
Relative Lichtstärke
I
V
/
I
V(25 ˚C )
=
f
(
T
A
)
Relative luminous intensity
I
F
= 20 mA
Ι
V
2.0
OHL00416
I
F
Ι
V (25 ˚C)
1.6
20
1.2
15
0.8
10
0.4
super-red
orange
yellow
5
0
0 10 20 30 40 50 60 70 80 ˚C 100
T
A
0
-20
0
20
40
60
˚C
T
A
100
Semiconductor Group
5
1998-09-15
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