These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGF330SK60D3 – Rev 0
July, 2003
Max ratings
600
460
330
800
±20
1400
Unit
V
A
V
W
APTGF330SK60D3
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
V
CE(on)
V
GE(th)
I
GES
Symbol
C
ies
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
off
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
All ratings @ T
j
= 25°C unless otherwise specified
Test Conditions
V
GE
= 0V, I
C
= 10 mA
T
j
= 25°C
V
GE
= 0V
V
CE
= 600V
T
j
= 125°C
T
j
= 25°C
V
GE
= 15V
I
C
= 400A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 8 mA
V
GE
= 20V, V
CE
= 0V
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 400A
R
G
= 0.82Ω
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 400A
R
G
= 0.82Ω
Min
600
Typ
2
1.5
2.0
2.2
4.5
Max
750
2.5
6.5
600
Unit
V
µA
mA
V
V
nA
Dynamic Characteristics
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off energy
Min
Typ
18
1.6
165
40
250
35
180
50
285
40
13
Max
Unit
nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
V
F
E
r
Q
rr
Diode Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
Test Conditions
I
F
= 400A
V
GE
= 0V
I
F
= 400A
V
R
= 300V
di/dt =900A/µs
I
F
= 400A
V
R
= 300V
di/dt =900A/µs
Min
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Typ
1.25
1.2
8.2
24
40
Max
1.6
Unit
V
mJ
µC
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
For terminals
Mounting torque
To Heatsink
Package Weight
IGBT
Diode
Min
Typ
Max
0.089
0.15
150
125
125
5
5
380
Unit
°C/W
July, 2003
2-3
APTGF330SK60D3 – Rev 0
2500
-40
-40
-40
3
3
V
°C
N.m
g
M6
M6
APT website – http://www.advancedpower.com
APTGF330SK60D3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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