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KTK596

Description
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE)
CategoryDiscrete semiconductor    The transistor   
File Size39KB,3 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KTK596 Overview

N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE)

KTK596 Parametric

Parameter NameAttribute value
MakerKEC
package instruction,
Reach Compliance Codeunknow
FET technologyJUNCTION
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.1 W
surface mountNO
SEMICONDUCTOR
TECHNICAL DATA
CONDENSER MICROPHONE APPLICATION.
FEATURES
Expecially Suited for Use in Audio, Telephone.
Capacitor Microphones.
Excellent Transient Characteristics.
F
KTK596
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
B
Excellent Voltage Characteristics.
H
A
O
M
G
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Gate-Drain Voltage
Gate Current
Drain Current
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
GDO
I
G
I
D
P
D
T
j
T
stg
RATING
-20
10
1
400
150
-55 150
UNIT
V
mA
mA
mW
J
E
E
1
L
2
3
N
DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
_
D
2.40 + 0.15
E
1.27
F
2.30
_
G
14.00 + 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.75
1. SOURCE
2. GATE
3. DRAIN
K
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Foward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Note : I
DSS
Classification
SYMBOL
V
(BR)GDO
V
GS(OFF)
I
DSS
(Note)
| y
fs
|
C
iss
C
rss
TEST CONDITION
I
G
=-100 A
V
DS
=5V, I
D
=1 A
V
DS
=5V, V
GS
=0
V
DS
=5V, V
GS
=0, f=1kHz
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
MIN.
-20
-
100
0.4
-
-
TYP.
-
-0.6
-
1.2
3.5
0.65
MAX.
-
-1.5
480
-
-
-
UNIT
V
V
A
mS
pF
pF
A:100 170, B:150 240, C:210
350, C1:210~310, C2:290~350, D:320 480
2002. 8. 7
Revision No : 3
D
TO-92M
1/3
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