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KTA501E

Description
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
CategoryDiscrete semiconductor    The transistor   
File Size396KB,3 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KTA501E Overview

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

KTA501E Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts5
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-F5
Number of components2
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
KTA501E
EPITAXIAL PLANAR PNP TRANSISTOR
B
FEATURES
A super-minimold package houses 2 transistor.
High pairing property in h
FE
.
The follwing characteristics are common for Q
1
, Q
2
.
A1
A
C
B1
Excellent temperature response between these 2 transistor.
1
5
DIM
A
A1
B
2
3
4
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_ 0.05
1.2+
0.50
_
0.2 + 0.05
_ 0.05
0.5 +
_
0.12 + 0.05
5
C
P
P
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
)
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
-50
-50
-5
-150
-30
200
150
-55 150
V
V
V
mA
mA
mW
1. Q
1
BASE
2. Q
1
, Q
2
EMITTER
3. Q
2
BASE
4. Q
2
COLLECTOR
5. Q
1
COLLECTOR
J
SYMBOL
RATING
UNIT
H
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
D
Q2
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2
I
C
=-100
, I
B
=-10
MIN.
-
-
120
-
80
-
, Rg=10
-
TYP.
-
-
-
-0.1
-
4
1.0
Type Name
5
4
MAX.
-0.1
-0.1
400
-0.30
-
7
10
UNIT.
V
V
CE
=-10V, I
C
=-1
V
CB
=-10V, I
E
=0, f=1
V
CE
=-6V, I
C
=-0.1
, f=1
Note : h
FE
Classification Y(4):120 240, GR(6):200 400
Marking
S
1
2
3
h
FE
Rank
2003. 2. 25
Revision No : 2
1/3

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