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KSB564AYTA

Description
Audio Frequency Power Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size39KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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Audio Frequency Power Amplifier

KSB564AYTA Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
Contacts3
Manufacturer packaging code3 LD, TO92 MOLDED TO-5 STANDARD LD FORM ( JO5Z OPTION)
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)110 MHz
KSB564A
KSB564A
Audio Frequency Power Amplifier
Complement to KSD471A
Collector Current : I
C
= -1A
Collector Power Dissipation : P
C
= 800mW
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-30
-25
-5
-1.0
800
150
-55 ~ 150
Units
V
V
V
A
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -30V, I
E
=0
V
CE
= -1V, I
C
= -100mA
I
C
= -1A, I
B
= -0.1A
I
C
= -1A, I
B
= -0.1A
V
CE
= -6V, I
C
= -10mA
V
CB
= -6V, I
E
=0, f=1MHz
110
18
70
Min.
-30
-25
-5
-0.1
400
-0.5
-1.2
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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