KSA733
KSA733
Low Frequency Amplifier
• Collector-Base Voltage : V
CBO
= -60V
• Complement to KSC945
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-60
-50
-5
-150
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -10mA. I
B
=0
I
E
= -10µA. I
C
=0
V
CB
= --60V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -1mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -10mA
V
CB
= -10V, I
E
= 0, f=1MHz
V
CE
= -6V, I
C
= -0.3mA
f=1MHz, Rs=10kΩ
-0.50
50
40
-0.18
-0.62
180
2.8
6.0
20
Min.
-60
-50
-5
-100
-100
700
-0.3
-0.80
V
V
MHz
pF
dB
Typ.
Max.
Units
V
V
V
nA
nA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
L
350 ~ 700
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSA733
Typical Characteristics
-50
-45
1000
V
CE
= -6V
I
B
= -400
µ
A
I
B
= -350
µ
A
I
B
= -300
µ
A
I
B
= -250
µ
A
I
B
= -200
µ
A
I
B
= -150
µ
A
I
B
= -100
µ
A
I
B
= -50
µ
A
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
1
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
-40
-35
-30
-25
-20
-15
-10
-5
0
h
FE
, DC CURRENT GAIN
100
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-100
I
C
= 10 I
B
V
CE
= -6V
I
C
[mA], COLLECTOR CURRENT
-1
V
BE
(sat)
-10
-0.1
-1
V
CE
(sat)
-0.01
-1
-10
-100
-1000
-0.1
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
I
E
= 0
f = 1MHz
10
V
CE
= -6V
C
ob
[pF], CAPACITANCE
100
1
-1
-10
-100
10
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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As used herein:
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or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
RF/Wirelessly
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