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Datasheet> All Categories > Discrete semiconductor> The transistor> KSA1298
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KSA1298

Description
Low Frequency Power Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size42KB，3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSA1298 Overview

Low Frequency Power Amplifier

KSA1298 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz

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KSA1298
KSA1298
Low Frequency Power Amplifier
• Complement to KSC3265
2
1
3
SOT-23
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
1. Base 2. Emitter 3. Collector
Ratings
-30
-25
-5
-800
-160
200
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
°C
°C
•
Refer to KSA643 for graphs.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -10mA, I
B
=0
I
E
= -1mA, I
C
=0
V
CB
= -30V, I
E
=0
V
BE
= -5V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
= -500mA, I
B
= -20mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
V
CB
= -10V, I
E
= 0, f=1MHz
-0.5
120
13
100
40
Min.
-25
-5
-100
-100
320
-0.4
-0.8
V
V
MHz
pF
Typ.
Max.
Units
V
V
nA
nA
h
FE1
Classification
Classification
h
FE1
Marking
O
100 ~ 200
Y
160 ~ 320
J1 O
h
FE
grade
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

KSA1298 Related Products

KSA1298 KSA1298O KSA1298Y
Description Low Frequency Power Amplifier Low Frequency Power Amplifier Low Frequency Power Amplifier
Is it Rohs certified? conform to incompatible incompatible
Parts packaging code SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 100 160
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz
JESD-609 code - e0 e0
Maximum operating temperature - 150 °C 150 °C
Maximum power dissipation(Abs) - 0.2 W 0.2 W
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches - 1 1

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