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Datasheet> All Categories > Discrete semiconductor> The transistor> KRC852U
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KRC852U

Description
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
CategoryDiscrete semiconductor    The transistor   
File Size108KB，6 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Environmental Compliance
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KRC852U Overview

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRC852U Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerKEC
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz

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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
A1
KRC851U~KRC856U
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
5
4
D
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
2
DIM
A
A1
B
B1
C
D
G
H
3
MILLIMETERS
_
2.00 + 0.20
_
1.3 + 0.1
_
2.1 + 0.1
_
1.25 + 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 + 0.1
0.15+0.1/-0.05
A
H
C
C
EQUIVALENT CIRCUIT
OUT
R1
R2
BIAS RESISTOR VALUES
TYPE NO.
KRC851U
R1(k
4.7
10
22
47
2.2
4.7
)
R2(k
4.7
10
22
47
47
47
)
1.
2.
3.
4.
5.
6.
Q
1
Q
1
Q
2
Q
2
Q
2
Q
1
G
T
T
IN
KRC852U
KRC853U
KRC854U
COMMON
COMMON (EMITTER)
IN (BASE)
OUT (COLLECTOR)
COMMON (EMITTER)
IN (BASE)
OUT (COLLECTOR)
KRC855U
KRC856U
US6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
MAXIMUM RATING (Ta=25
Output Voltage
)
SYMBOL
KRC851U
856U
V
O
KRC851U
KRC852U
KRC853U
KRC854U
KRC855U
KRC856U
1
2
3
CHARACTERISTIC
RATING
50
20, -10
30, -10
40, -10
40, -10
12, -5
20, -5
UNIT
V
Input Voltage
V
I
V
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
KRC851U
856U
I
O
P
D
*
T
j
T
stg
100
200
150
-55 150
mA
mW
Marking
6
5
4
Type Name
MARK SPEC
TYPE
MARK
KRC851U
NA
KRC852U
NB
KRC853U
NC
KRC854U
ND
KRC855U
NE
KRC856U
NF
1
2
3
2002. 1. 24
Revision No : 2
1/6

KRC852U Related Products

KRC852U KRC856U KRC855U KRC854U KRC853U KRC851U
Description EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6 6 6 6 6
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 50 80 80 80 70 30
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
Number of components 2 2 2 2 2 2
Number of terminals 6 6 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
Maker KEC - - KEC KEC KEC

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