KRC409 datasheet, PDF - EEWORLD Datasheet

KRC409: DescriptionEPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT); CategoryDiscrete semiconductor The transistor; File Size377KB，4 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KRC409 Overview

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

Parameter Name	Attribute value
Maker	KEC
package instruction	USM, 3 PIN
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 0.47
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

	KRC409	KRC407	KRC408
Description	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
Maker	KEC	KEC	KEC
package instruction	USM, 3 PIN	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 0.47	BUILT-IN BIAS RESISTOR RATIO IS 4.7	BUILT-IN BIAS RESISTOR RATIO IS 2.14
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70	80	80
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.1 W	0.1 W	0.1 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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