KRC242M datasheet, PDF - EEWORLD Datasheet

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KRC242M: DescriptionEPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT); CategoryDiscrete semiconductor The transistor; File Size722KB，5 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KRC242M Overview

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRC242M Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92M
package instruction	CYLINDRICAL, R-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	39
JESD-30 code	R-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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KRC242M Related Products

	KRC242M	KRC246M	KRC245M	KRC244M	KRC243M	KRC241M
Description	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
Maker	KEC	KEC	KEC	KEC	KEC	KEC
Parts packaging code	TO-92M	TO-92M	TO-92M	TO-92M	TO-92M	TO-92M
package instruction	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknow	unknown	unknown	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 4.55	BUILT-IN BIAS RESISTOR RATIO IS 10	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	39	56	56	56	47	33
JESD-30 code	R-PBCY-T3	R-PBCY-T3	R-PBCY-T3	R-PBCY-T3	R-PBCY-T3	R-PBCY-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz

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