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IXGP12N60U1

Description
Low VCE(sat) IGBT with Diode Combi Pack
File Size71KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
Download Datasheet View All

IXGP12N60U1 Overview

Low VCE(sat) IGBT with Diode Combi Pack

Preliminary data
Low V
CE(sat)
IGBT with Diode
Combi Pack
IXGP12N60U1
V
CES
I
C
V
CE(sat)
=
=
=
600 V
24 A
2.5 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 150
Clamped inductive load, L = 300
µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
24
12
48
I
CM
= 20
@ 0.8 V
CES
100
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
TO-220 AB
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
4
300
g
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Features
International standard package
JEDEC TO-220 AB
IGBT with antiparallel FRED in one
package
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode FRED)
- soft recovery with low I
RM
l
l
l
l
l
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5.5
250
2.5
±100
2.5
V
V
µA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 750
µA,
V
GE
= 0 V
= 250
µA,
V
GE
= V
GE
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
l
l
l
l
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
CE90
, V
GE
= 15 V
l
l
l
l
Advantages
Easy to mount with 1 screw
Space savings (two devices in one
package)
Reduces assembly time and cost
High power density
© 1996 IXYS All rights reserved
92792D (9/96)
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