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KBPC3508S

Description
35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size65KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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KBPC3508S Overview

35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

MCC
Features
  omponents
21201 Itasca Street Chatsworth


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KBPC3500S
THRU
KBPC3510S
35 Amp Single Phase
Bridge Rectifier
50 to 1000 Volts
KBPC
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
Designed for Saving Mounting Space
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
MCC
Catalog
Number
KBPC3500S
KBPC3501S
KBPC3502S
KBPC3504S
KBPC3506S
KBPC3508S
KBPC3510S
Device
Marking
KBPC3500S
KBPC3501S
KBPC3502S
KBPC3504S
KBPC3506S
KBPC3508S
KBPC3510S
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
I
F(AV)
I
FSM
35.0A
400A
T
C
=
60°C
8.3ms, half sine
V
F
1.2V
I
FM
= 17.5A per
element;
T
A
= 25°C
DIM
A
B
C
D
E
G
H
INCHES
MIN
1.12
.432
.547
.752
.201
.047
.120
DIMENSIONS
MM
MIN
28.40
10.97
13.90
19.10
5.10
1.20
3.05
Maximum DC
Reverse Current At
I
R
10µA
T
A
= 25°C
Rated DC Blocking
1.0mA T
A
= 100°C
Voltage
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
MAX
1.13
.442
---
---
---
---
.142
MAX
28.70
11.23
---
---
---
---
3.60
NOTE
www.mccsemi.com

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KBPC3508S KBPC3510S KBPC3506S KBPC3504S KBPC3502S KBPC3501S KBPC3500S
Description 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
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